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Product Detailed Parameters
- Description：RF TRANS NPN 12V 4.5GHZ 3-MINI
- Series：-
- Mfr：CEL
- Package：Bulk
- Transistor Type：NPN
- Voltage - Collector Emitter Breakdown (Max)：12V
- Frequency - Transition：4.5GHz
- Noise Figure (dB Typ @ f)：1.4dB ~ 2.5dB @ 1GHz
- Gain：-
- Power - Max：125mW
- DC Current Gain (hFE) (Min) @ Ic, Vce：80 @ 7mA, 3V
- Current - Collector (Ic) (Max)：100mA
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-623F
- Supplier Device Package：3-SuperMiniMold (M03)
- Grade：-
- Qualification：-
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Overview
The NE856M03-A is an NPN silicon transistor designed for low-cost amplifier and oscillator applications. It features a new M03 package, which is the smallest transistor outline package available with a low profile of 0.59 mm height and flat lead style for better RF performance. The device offers a low noise figure of 1.4 dB at 1 GHz, high collector current capability up to 100 mA, and high gain. These characteristics provide wide dynamic range and excellent linearity, making it ideal for portable wireless applications.
Feature Summary
- Low noise figure of 1.4 dB at 1 GHz
- High collector current capability up to 100 mA
- New M03 package with low profile and flat lead style
Applications
- Portable wireless applications
- Low cost amplifier applications
- Oscillator applications
Procurement Notes
Verify RoHS compliance status by checking for the -A suffix indicating Pb-free terminals. Confirm package type is M03 and ensure ordering quantity matches distributor availability. Cross-reference part number with CEL documentation for accurate specifications.
Selection Notes
Select based on required noise figure, gain, and current capabilities. Consider the M03 package size for space-constrained designs. Ensure operating conditions stay within absolute maximum ratings for voltage, current, and power dissipation.
Part Context
The NE856M03-A is part of the NEC/CEL NE856 series of NPN silicon transistors. This series includes various package options such as chip, Micro-x, and plastic surface mount styles. The M03 package specifically targets low-profile, high-performance RF applications.
Replacement Considerations
Check for direct substitutes from CEL or other manufacturers offering similar NPN silicon transistors in small outline packages with comparable RF performance metrics like noise figure and gain bandwidth product.
FAQ
What is the maximum collector current for the NE856M03-A?
The maximum collector current (ICMAX) is 100 mA.
What is the noise figure of the NE856M03-A at 1 GHz?
The noise figure (NF) is typically 1.4 dB at 1 GHz under specified bias conditions.
What package does the NE856M03-A use?
It uses the M03 package, which is described as the smallest transistor outline package available with a low profile of 0.59 mm.
