NE94430-T1-A

Overview

The NE94430-T1-A is a small-signal NPN bipolar RF transistor manufactured by CEL. It is housed in a SOT-323 surface-mount package and designed for oscillator and mixer applications. The device features a collector-emitter breakdown voltage of 15V, a transition frequency of 2GHz, and a maximum collector current of 50mA with a power dissipation rating of 150mW.

Feature Summary

• NPN bipolar junction transistor architecture optimized for radio frequency signal processing
• Integrated functionality supporting both oscillator and mixer circuit topologies
• Compact SOT-323 surface-mount packaging suitable for space-constrained designs

Applications

• RF oscillator circuits
• Mixer stages in receiver front-ends
• Small-signal amplification at VHF frequencies

Procurement Notes

Verify component authenticity through authorized distribution channels due to the obsolete lifecycle status. Confirm that the specific suffix matches the required electrical specifications. Request original manufacturer documentation or certified datasheets to validate performance parameters against design requirements before integration into production systems.

Selection Notes

Evaluate the 2GHz transition frequency and 15V breakdown limits against target operating conditions. Consider the SOT-323 footprint constraints for PCB layout. Assess thermal management capabilities given the 150mW dissipation rating. Ensure compatibility with existing biasing networks for NPN configurations in high-frequency environments.

Part Context

This component belongs to the NE94430 series of RF transistors produced by CEL (California Eastern Laboratories). It represents a specialized discrete semiconductor solution for analog RF signal handling. The product line focuses on providing reliable active components for communication hardware requiring precise frequency control and signal mixing capabilities.

Replacement Considerations

No public confirmed substitute part numbers are available.