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Product Detailed Parameters
- Description：RF TRANS NPN 15V 2GHZ SOT-23-3
- Series：-
- Mfr：CEL
- Package：Cut Tape (CT)
- Transistor Type：NPN
- Voltage - Collector Emitter Breakdown (Max)：15V
- Frequency - Transition：2GHz
- Noise Figure (dB Typ @ f)：-
- Gain：-
- Power - Max：150mW
- DC Current Gain (hFE) (Min) @ Ic, Vce：50 @ 5mA, 10V
- Current - Collector (Ic) (Max)：50mA
- Operating Temperature：-
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23-3
- Grade：-
- Qualification：-
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Overview
The NE94433-T1B-A is an NPN silicon epitaxial bipolar transistor from the NE944 series, manufactured by California Eastern Laboratories (CEL). It is designed for general-purpose UHF oscillator and mixer applications. Key electrical characteristics include a collector-to-base voltage of 30 V, a collector-emitter voltage of 15 V, and a maximum collector current of 50 mA. The device features a typical gain bandwidth product of 2.0 GHz and a feedback capacitance of 0.55 pF. It operates within a junction temperature range up to 125°C and dissipates 150 mW of power.
Feature Summary
- Designed for stable oscillation with minimal frequency drift across supply voltage and ambient temperature variations.
- Optimized for high gain bandwidth product suitable for UHF frequencies.
- Features low collector-to-base time constant and low feedback capacitance.
Applications
- General purpose UHF oscillator circuits
- UHF mixer applications
- Automotive keyless entry systems
- TV tuner designs
Procurement Notes
Verify the specific ordering suffix against official CEL documentation to confirm packaging and tape-and-reel specifications. Ensure the component matches the required EIAJ registered number and package code for your design. Cross-reference datasheet parameters with your circuit requirements before finalizing procurement.
Selection Notes
Select this component for UHF applications requiring stable oscillation and low noise. Consider the 125°C maximum junction temperature and 150 mW power dissipation limits when designing thermal management. Verify that the 30 V collector-to-base voltage rating meets your circuit's peak voltage requirements.
Part Context
The NE94433-T1B-A belongs to the NE944 series of NPN silicon epitaxial bipolar transistors. This series includes variants like the NE94430, differentiated by package codes and specific electrical tolerances. The part is distributed by CEL as an exclusive North American agent for RF, microwave, and optoelectronic semiconductors.
Replacement Considerations
The datasheet lists the EIAJ registered number 2SC3545 as equivalent to the NE94433 variant. Designers should verify pinout compatibility and electrical parameter overlaps before substituting with other UHF oscillator transistors.
FAQ
What is the typical gain bandwidth product of the NE94433?
The typical gain bandwidth product (fT) is 2.0 GHz at VCE = 3 V and IE = 5 mA.
What is the maximum collector-to-base voltage rating?
The absolute maximum rating for collector-to-base voltage (VCBO) is 30 V.
Is the NE94433 suitable for automotive applications?
Yes, the device is suitable for automotive keyless entry designs due to its stable oscillation and small frequency drift characteristics.
