NESG2021M16-T3-A

NESG2021M16-T3-A

$0.52
  • Description:RF TRANS NPN 5V 25GHZ M16/1208
  • Series:-

SKU:b75e8147c9cb Category: Brand:

  
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Product Detailed Parameters

  • Description:RF TRANS NPN 5V 25GHZ M16/1208
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Bulk
  • Transistor Type:NPN
  • Voltage - Collector Emitter Breakdown (Max):5V
  • Frequency - Transition:25GHz
  • Noise Figure (dB Typ @ f):0.9dB ~ 1.3dB @ 2GHz ~ 5.2GHz
  • Gain:10dB ~ 18dB
  • Power - Max:175mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce:130 @ 5mA, 2V
  • Current - Collector (Ic) (Max):35mA
  • Operating Temperature:-
  • Mounting Type:Surface Mount
  • Package / Case:6-SMD, Flat Leads
  • Supplier Device Package:M16, 1208
  • Grade:-
  • Qualification:-

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NESG2021M16-T3-A

Overview

The NESG2021M16-T3-A is an L-band silicon germanium (SiGe) NPN RF small signal transistor manufactured by Renesas Electronics Corporation. Designed for high-frequency applications, this component operates within the L band spectrum and utilizes a leadless Minimold M16 package with a 1208 footprint. The device features six pins and is constructed using silicon germanium technology to ensure reliable performance in radio frequency circuits.

Feature Summary

  • Utilizes silicon germanium (SiGe) technology for enhanced RF performance
  • Optimized for L-band frequency operations
  • NPN configuration suitable for small signal amplification
  • Leadless Minimold M16 package design for compact integration

Applications

  • L-band radio frequency circuitry
  • Small signal amplification stages
  • RF communication modules

Part Context

This component belongs to the Renesas portfolio of RF discrete semiconductors. It is categorized as an active RF small signal transistor. The part is identified under both NEC and Renesas branding due to corporate history, representing a standard L-band SiGe NPN device.

NESG2021M16-T3-ANESG2021M16-T3-A
$0.52
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