NESG2031M05-T1-A

NESG2031M05-T1-A

$0.49
  • Description:RF TRANS NPN 5V 25GHZ M05
  • Series:-

SKU:06f1625d9714 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF TRANS NPN 5V 25GHZ M05
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Bulk
  • Transistor Type:NPN
  • Voltage - Collector Emitter Breakdown (Max):5V
  • Frequency - Transition:25GHz
  • Noise Figure (dB Typ @ f):0.8dB ~ 1.3dB @ 2GHz ~ 5.2GHz
  • Gain:10dB ~ 17dB
  • Power - Max:175mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce:130 @ 5mA, 2V
  • Current - Collector (Ic) (Max):35mA
  • Operating Temperature:-
  • Mounting Type:Surface Mount
  • Package / Case:SOT-343F
  • Supplier Device Package:M05
  • Grade:-
  • Qualification:-

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NESG2031M05-T1-A

Overview

The NESG2031M05-T1-A is an NPN Silicon-Germanium (SiGe) RF transistor designed for signal amplification in high-frequency applications. It operates with a maximum collector-emitter voltage of 5V and supports frequencies up to 25GHz. The device delivers typical low noise figure performance of 0.8 dB and high gain of 17.0 dB at low current levels. Packaged in the M05 surface-mount format, it ensures reliable operation within standard industrial temperature ranges.

Feature Summary

  • Optimized for low noise and high-gain amplification at low current consumption
  • Utilizes Silicon-Germanium technology for superior RF performance
  • Designed as an ideal choice for sensitive signal chain applications

Applications

  • Low noise amplifier stages in RF front-ends
  • Signal amplification in wireless communication systems
  • High-frequency circuit design requiring minimal noise insertion

Procurement Notes

Verify the specific M05 package marking and manufacturer lot codes upon receipt to ensure authenticity. Confirm that the received components match the Renesas Electronics Corporation specifications for the NESG2031 series. Check for any physical damage to the leads before soldering. Ensure storage conditions comply with moisture sensitivity level requirements to maintain device integrity during assembly processes.

Selection Notes

Select this component when designing circuits that require high gain combined with ultra-low noise figures at microwave frequencies. The SiGe construction offers advantages over standard silicon devices for RF applications. Consider the 5V operating limit and 25GHz frequency range when matching system requirements. Evaluate thermal management needs given the small surface-mount footprint and power dissipation characteristics.

Part Context

This part belongs to the NESG2031 family of NPN SiGe RF transistors from Renesas Electronics. These devices are engineered specifically for radio frequency signal processing tasks. The M05 packaging variant provides a compact solution for modern PCB layouts. The series is recognized for its consistency in noise performance across production batches.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation. Direct replacements must be verified against electrical parameters such as noise figure, gain, and frequency response. Consult official cross-reference guides or contact the manufacturer for validated alternatives.

NESG2031M05-T1-ANESG2031M05-T1-A
$0.49
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