NESG2101M05-T1-A

Overview

The NESG2101M05-T1-A is an NPN Silicon-Germanium (SiGe) high-frequency RF bipolar transistor manufactured by CEL, a Renesas Electronics brand. Designed for surface-mount applications in the M05 package, this single-configured device operates up to 17 GHz. Key electrical specifications include a collector continuous current of 100 mA and a power dissipation rating of 130 mW. The emitter-base voltage (VEBO) is rated at 1.5 V. It supports a wide operating temperature range from -65°C to +150°C junction temperature.

Feature Summary

• Utilizes SiGe technology for enhanced high-frequency performance
• Optimized for SMD/SMT installation in compact M05 packages
• Capable of operation at frequencies up to 17 GHz

Applications

• High-frequency RF amplifier circuits
• Microwave communication systems
• Test and measurement equipment front-ends

Procurement Notes

Verify component authenticity through authorized channels as availability may be restricted. Confirm RoHS compliance status directly with the supplier, as documentation indicates potential non-compliance. Ensure the specific suffix matches design requirements before ordering.

Selection Notes

Select this component for designs requiring high-speed switching or amplification in the microwave spectrum. Verify that the thermal management solution accommodates the 130 mW dissipation limit within the specified temperature range. Check compatibility with the M05 footprint during PCB layout.

Part Context

This part belongs to the RF Bipolar Transistors category under the CEL brand, which is integrated into Renesas Electronics Corporation's portfolio. It serves specialized analog and RF functions distinct from Renesas' primary microcontroller and logic product lines.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Consult official datasheets for pin-compatible alternatives if direct replacement is required.