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The NGB15N41CLT4G is a Logic Level Insulated Gate Bipolar Transistor (IGBT) from onsemi, packaged in D2PAK. It features monolithic circuitry integrating ESD and over-voltage clamped protection for use in inductive coil drivers applications. The device offers a collector-emitter voltage of 440 VDC and continuous collector current of 15 A at 25°C case temperature. Key electrical parameters include a gate threshold voltage ranging from 1.1 V to 1.9 V at 25°C, and a saturation voltage of 1.6 V typical at IC = 6.0 A and VGE = 4.0 V. Thermal resistance junction-to-case is 1.4 °C/W.
Verify the specific ordering suffix 'T4' against official documentation to confirm tape and reel packaging specifications. Ensure compatibility with Pb-free manufacturing processes as indicated by the 'G' suffix in related part numbers within the same family. Cross-reference thermal pad dimensions for proper PCB footprint implementation.
Select this component when logic-level drive compatibility is required alongside high voltage blocking capabilities. Evaluate the single pulse safe operating area curves against the specific application's duty cycle and peak current requirements. Consider the D2PAK package for its balance of board space efficiency and thermal performance compared to smaller surface mount options.
This IGBT belongs to a family including NGD15N41CL, NGB15N41CL, and NGP15N41CL variants, differentiated primarily by package type such as DPAK, D2PAK, and TO-220. All share identical electrical characteristics and are designed for ignition and fuel injection markets. The NGB prefix specifically denotes the D2PAK surface-mount configuration.
Compatible substitutes within the same family include NGD15N41CLT4G (DPAK) and NGP15N41CLG (TO-220). Verify pinout compatibility and thermal resistance differences before substitution. Ensure any replacement maintains the required 440 V collector-emitter voltage rating and 15 A continuous current capability.