NGB15N41CLT4G

$0.82

Description：IGBT N-CHAN 15A 410V D2PAK
Series：-

SKU:2c43bcd7eb11 Category: Single IGBTs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：IGBT N-CHAN 15A 410V D2PAK
Series：-
Mfr：onsemi
Package：Bulk
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：440 V
Current - Collector (Ic) (Max)：15 A
Current - Collector Pulsed (Icm)：50 A
Vce(on) (Max) @ Vge, Ic：2.1V @ 4.5V, 10A
Power - Max：107 W
Switching Energy：-
Input Type：Logic
Gate Charge：-
Td (on/off) @ 25°C：-/4µs
Test Condition：300V, 6.5A, 1kOhm
Reverse Recovery Time (trr)：-
Operating Temperature：-
Mounting Type：Surface Mount
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package：D2PAK
Grade：-
Qualification：-

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NGB15N41CLT4G

Overview

The NGB15N41CLT4G is a logic-level Insulated Gate Bipolar Transistor (IGBT) manufactured by onsemi, designed for high-voltage and high-current switching applications. It features monolithic circuitry integrating ESD and over-voltage clamped protection. The device operates with a collector-emitter voltage of 440 VDC and supports a continuous collector current of 15 A at 25°C case temperature, with a pulsed capability of 50 A. Total power dissipation reaches 107 W at 25°C. The saturation voltage is typically 1.6 V at 6 A and 4.0 V gate drive. Thermal resistance from junction to case is 1.4 °C/W.

Feature Summary

Integrates ESD and over-voltage clamped protection for inductive coil drivers
Features temperature compensated gate-collector voltage clamp to limit load stress
Offers low threshold voltage to interface power loads to logic or microprocessor devices
Includes optional internal gate resistor and gate-emitter resistor

Applications

Ignition systems
Direct fuel injection
Coil-on-plug applications
High voltage and high current switching circuits

Procurement Notes

Verify the component status as obsolete before procurement planning. Confirm availability through authorized distributors or approved replacement part numbers. Ensure that any substitute components meet the original electrical specifications and package dimensions required for the specific application design.

Selection Notes

Select this IGBT for applications requiring robust inductive load handling and integrated protection features. Consider the D2PAK package for surface mount designs needing smaller footprints. Evaluate thermal management requirements based on the specified junction-to-case thermal resistance and derating curves for continuous operation.

Part Context

This component belongs to the NGD/NGB/NGP15N41CL family of ignition IGBTs from onsemi. The 'NGB' prefix specifically denotes the D2PAK surface-mount package variant. Other variants in the series include NGD for DPAK and NGP for TO-220 packages, all sharing similar electrical characteristics but differing in physical form factor.