NGB18N40CLBT4G

$0.96

Description：IGBT 430V 18A 115W D2PAK
Series：-

SKU:04fd977fe3dd Category: Single IGBTs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：IGBT 430V 18A 115W D2PAK
Series：-
Mfr：onsemi
Package：Tape & Reel (TR)
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：430 V
Current - Collector (Ic) (Max)：18 A
Current - Collector Pulsed (Icm)：50 A
Vce(on) (Max) @ Vge, Ic：2.5V @ 4V, 15A
Power - Max：115 W
Switching Energy：-
Input Type：Logic
Gate Charge：-
Td (on/off) @ 25°C：-
Test Condition：-
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package：D2PAK
Grade：-
Qualification：-

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NGB18N40CLBT4G

Overview

The NGB18N40CLBT4G is a logic-level insulated gate bipolar transistor (IGBT) from onsemi, designed for high-voltage and high-current switching applications. It features monolithic circuitry integrating ESD and over-voltage clamped protection. The device operates with a collector-emitter voltage of 430 VDC and supports continuous collector currents up to 18 A at 25°C, with pulsed capability reaching 50 A. Total power dissipation is rated at 115 W at 25°C. It utilizes a D2PAK surface-mount package (CASE 418B) and functions within an operating temperature range of -55°C to +175°C.

Feature Summary

Integrates ESD and over-voltage clamped protection for inductive coil drivers
Features temperature-compensated gate-collector voltage clamp to limit stress
Includes integrated gate-emitter resistor and emitter ballasting for short-circuit capability
Low threshold voltage allows direct interface with logic or microprocessor devices

Applications

Ignition systems
Direct fuel injection
Coil-on-plug applications

Procurement Notes

Verify the component status as discontinued by checking official manufacturer documentation. Confirm that the 'G' suffix indicates a lead-free package compliant with relevant environmental standards. Ensure the ordering information matches the specific tape and reel specifications required for automated assembly processes.

Selection Notes

Select this component for applications requiring robust unclamped inductive switching energy per area. Consider the low saturation voltage and high pulsed current capability when designing circuits for harsh environments. Verify thermal management requirements against the junction-to-case thermal resistance values provided in the datasheet.

Part Context

This IGBT belongs to the NGB18N series, which focuses on ignition-specific performance. It is part of onsemi's portfolio of power semiconductors optimized for automotive and industrial switching loads. The D2PAK package provides a compact solution for surface-mount technology implementations.