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Product Detailed Parameters
- Description：IGBT 440V 20A 150W D2PAK
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Bulk
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：440 V
- Current - Collector (Ic) (Max)：20 A
- Current - Collector Pulsed (Icm)：50 A
- Vce(on) (Max) @ Vge, Ic：1.9V @ 4.5V, 20A
- Power - Max：150 W
- Switching Energy：-
- Input Type：Logic
- Gate Charge：-
- Td (on/off) @ 25°C：-/5µs
- Test Condition：300V, 9A, 1kOhm, 5V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package：D2PAK
- Grade：-
- Qualification：-
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Overview
The NGB8202NT4G is a Logic Level Insulated Gate Bipolar Transistor (IGBT) manufactured by onsemi, designed for high-voltage and high-current switching applications. It features monolithic circuitry integrating ESD and overvoltage clamped protection. Key electrical parameters include a collector-emitter voltage of 440 V, continuous collector current of 20 A, and pulsed collector current of 50 A. The saturation voltage is 1.9 V maximum at 20 A and 4.5 V gate drive. Total power dissipation is 150 W at 25°C case temperature. The device operates within a junction temperature range of -55°C to +175°C and is housed in a D2PAK surface-mount package.
Feature Summary
- Integrates ESD and overvoltage clamped protection for robust operation in inductive coil drivers
- Features a low threshold voltage suitable for interfacing with logic or microprocessor devices
- Includes temperature compensated gate-collector voltage clamp to limit stress applied to the load
Applications
- Ignition systems
- Direct fuel injection
- Coil-on-plug applications
- Driver-on-coil applications
Procurement Notes
Verify the component status as discontinued when sourcing this part. Confirm that the specific ordering suffix matches the required packaging configuration, such as tape and reel quantities. Ensure compliance with RoHS standards if lead-free construction is mandated for the assembly process. Cross-reference datasheet revision numbers to guarantee parameter accuracy during procurement.
Selection Notes
Select this IGBT for applications requiring high voltage blocking capability combined with integrated gate protection. Evaluate the thermal resistance characteristics against the expected duty cycle and ambient conditions. Consider the low saturation voltage for efficiency optimization in high-current switching scenarios. Verify that the gate drive voltage aligns with the specified logic level thresholds for optimal performance.
Part Context
This component belongs to the NGB8202N family of Ignition IGBTs from onsemi. It shares core specifications with variants differing primarily in packaging or environmental compliance suffixes. The device is engineered specifically for automotive-grade reliability in demanding power switching environments involving inductive loads.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and thermal characteristics before considering alternative components from other manufacturers.
