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Product Detailed Parameters
- Description：IGBT 430V 18A D2PAK
- Series：-
- Mfr：onsemi
- Package：Bulk
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：430 V
- Current - Collector (Ic) (Max)：18 A
- Current - Collector Pulsed (Icm)：50 A
- Vce(on) (Max) @ Vge, Ic：2.5V @ 4V, 15A
- Power - Max：115 W
- Switching Energy：-
- Input Type：Logic
- Gate Charge：-
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package：D2PAK
- Grade：-
- Qualification：-
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Overview
The NGB8204ANT4G is a single Insulated Gate Bipolar Transistor (IGBT) manufactured by onsemi, designed for high-efficiency power switching applications. It features a collector-emitter voltage rating of 430 V and a continuous collector current capacity of 18 A. The device is housed in a surface-mount TO-263-3 (D²PAK) package, which includes two leads and a tab for thermal management. With a maximum power dissipation of 115 W and an operating junction temperature range from -55°C to 175°C, it provides robust performance in compact designs.
Feature Summary
- Engineered specifically for automotive ignition systems requiring reliable high-voltage switching
- Utilizes a surface-mount D²Pak package to facilitate automated assembly and space-constrained layouts
- Supports extended thermal operation with a junction temperature range up to 175°C
Applications
- Automotive ignition coil drivers
- High-voltage power switching circuits
- Industrial inverter modules
Procurement Notes
Verify the component authenticity by checking the manufacturer's marking code against official datasheet specifications. Ensure the ordering suffix matches the required tape-and-reel or tube packaging configuration. Confirm that the received part number corresponds exactly to NGB8204ANT4G to avoid compatibility issues with existing circuit designs.
Selection Notes
Select this IGBT when designing circuits that require a balance between high voltage blocking capability and moderate current handling in a surface-mount form factor. Consider the thermal resistance characteristics of the D²Pak package for heat dissipation requirements. Evaluate the gate charge parameters if driving frequency impacts efficiency in the specific application environment.
Part Context
This component belongs to onsemi’s portfolio of intelligent power and sensing technologies, targeting automotive and industrial markets. It is part of a broader family of discrete transistors designed to enhance system reliability and energy efficiency. The NGB8204ANT4G represents a specialized solution for applications demanding robust insulation and high-temperature stability.
Replacement Considerations
Consult official cross-reference data for direct substitutes. Verify pinout compatibility and electrical parameter equivalence before substitution. Ensure any alternative component meets the same thermal and voltage ratings to maintain system integrity.
