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Product Detailed Parameters
- Description：IGBT 430V 18A 115W D2PAK
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR)
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：430 V
- Current - Collector (Ic) (Max)：18 A
- Current - Collector Pulsed (Icm)：50 A
- Vce(on) (Max) @ Vge, Ic：2.5V @ 4V, 15A
- Power - Max：115 W
- Switching Energy：-
- Input Type：Logic
- Gate Charge：-
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package：D2PAK
- Grade：-
- Qualification：-
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Overview
The NGB8204NT4G is a logic-level Insulated Gate Bipolar Transistor (IGBT) from onsemi, packaged in a D2PAK (TO-252). It features monolithic circuitry integrating ESD and overvoltage clamped protection for use in inductive coil drivers. Key electrical parameters include a collector-emitter voltage of 430 VDC, continuous collector current of 18 A at 25°C case temperature, and pulsed current capability of 50 A. The device exhibits a low saturation voltage of 2.0 V maximum at IC = 10 A and VGE = 4.5 V. Thermal characteristics specify a junction-to-case thermal resistance of 1.3 °C/W. The component operates within a temperature range of -55°C to +175°C.
Feature Summary
- Integrates gate-emitter ESD protection and an integrated gate-emitter resistor.
- Features temperature-compensated gate-collector voltage clamp to limit stress applied to the load.
- Includes an integrated ESD diode protection mechanism.
- Designed with emitter ballasting to enhance short-circuit capability.
Applications
- Ignition systems
- Direct fuel injection circuits
- Coil-on-plug applications
Procurement Notes
Verify the specific ordering suffix 'T4G' corresponds to the tape and reel packaging configuration containing 800 units per reel. Confirm that the device variant matches the required protection features, such as the integrated gate-emitter resistor and overvoltage clamp, which are critical for the intended inductive load switching application.
Selection Notes
Select this IGBT for high-voltage, high-current switching applications requiring robust protection against inductive kickback and electrostatic discharge. Ensure the driving circuit can provide the necessary gate voltage levels to achieve the specified low saturation voltage. Evaluate the thermal management requirements based on the junction-to-case thermal resistance to maintain operation within the specified temperature limits during pulsed or continuous duty cycles.
Part Context
This component belongs to the NGB8204N family of ignition IGBTs manufactured by onsemi. The 'N' suffix typically denotes the standard version, while the 'A' suffix indicates a variant with specific assembly location differences. The T4G suffix specifies the Pb-free tape and reel packaging format. These devices are engineered specifically for automotive and industrial environments where reliability under harsh electrical conditions is paramount.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. When evaluating alternatives, ensure compatibility with the D2PAK package dimensions and pinout configuration. Verify that any replacement device meets or exceeds the 430 V collector-emitter voltage rating and provides comparable short-circuit withstand times and UIS energy capabilities.
