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Product Detailed Parameters
- Description：IGBT 390V 20A D2PAK
- Series：-
- Mfr：onsemi
- Package：Bulk
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：390 V
- Current - Collector (Ic) (Max)：20 A
- Current - Collector Pulsed (Icm)：50 A
- Vce(on) (Max) @ Vge, Ic：1.9V @ 4.5V, 20A
- Power - Max：150 W
- Switching Energy：-
- Input Type：Logic
- Gate Charge：-
- Td (on/off) @ 25°C：-/5µs
- Test Condition：300V, 9A, 1kOhm, 5V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package：D2PAK
- Grade：-
- Qualification：-
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Overview
The NGB8206ANSL3G is an N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by onsemi, designed for high-voltage switching applications. It features a D²PAK surface-mount package with an insulated tab. The device integrates monolithic circuitry including ESD protection and overvoltage clamping to enhance reliability in inductive load environments. Key electrical parameters include a collector-emitter voltage rating of 350 V and a continuous collector current capacity of 20 A at 25°C. The component operates within a junction temperature range of -55°C to +175°C, making it suitable for automotive ignition systems where robust thermal performance and compact packaging are required.
Feature Summary
- Integrated monolithic protection circuits for electrostatic discharge and overvoltage clamping
- Logic-level gate drive capability optimized for direct driver interface
- Insulated tab design facilitating efficient heat dissipation in power modules
Applications
- Ignition coil drivers and coil-on-plug systems
- Direct fuel injection control circuits
- High voltage and high current inductive switching loads
Procurement Notes
Verify the specific suffix 'SL3G' against official onsemi documentation to confirm tape-and-reel packaging specifications and RoHS compliance status. Ensure the ordering part number matches the exact pinout and thermal characteristics required for the target PCB layout. Cross-reference with the latest datasheet revision to confirm any updates to mechanical dimensions or recommended soldering profiles prior to procurement.
Selection Notes
Select this IGBT when designing ignition controllers requiring a balance of 350 V blocking capability and 20 A current handling in a compact surface-mount form factor. The integrated protection features reduce external component count compared to discrete solutions. Evaluate thermal resistance requirements based on the D²PAK package limitations and ensure the gate drive voltage aligns with the logic-level threshold specifications for optimal switching performance.
Part Context
This component belongs to the NGB8206 series of ignition IGBTs from onsemi, which are specifically engineered for automotive engine management systems. The series provides a reliable solution for replacing older through-hole technologies with modern surface-mount options. The NGB8206ANSL3G variant maintains the core electrical characteristics of the standard NGB8206N while adhering to specific manufacturing and packaging standards defined by the manufacturer for volume production.
Replacement Considerations
Compatible substitutes include the NGB8206NG and NGB8206NT4G. Verify that alternative packages maintain identical pin configurations and thermal performance metrics. Confirm that the replacement part meets the same 350 V and 20 A ratings to ensure circuit compatibility without redesign.
