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Product Detailed Parameters
- Description：IGBT, 20A, 390V, N-CHANNEL
- Series：*
- Mfr：onsemi
- Package：Bulk
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Current - Collector (Ic) (Max)：-
- Current - Collector Pulsed (Icm)：-
- Vce(on) (Max) @ Vge, Ic：-
- Power - Max：-
- Switching Energy：-
- Input Type：-
- Gate Charge：-
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The NGB8206NSL3 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by onsemi. It features a maximum continuous collector current of 20 A and a maximum collector-emitter voltage rating of 390 V. The device is housed in a D2PAK-3 surface-mount package, specifically identified as Case 418B-04. Key electrical characteristics include a maximum gate-emitter voltage of 15 V and a maximum fall time of 14,000 ns. The component is designed for high-voltage and high-current switching applications.
Feature Summary
- Integrates monolithic circuitry with built-in ESD protection and overvoltage clamping capabilities.
- Features logic-level control suitable for direct drive from microcontrollers or standard logic interfaces.
- Includes an integrated body diode for efficient commutation in inductive load driving scenarios.
Applications
- Ignition coil drivers
- Direct fuel injection systems
- Coil-on-plug ignition modules
Procurement Notes
Verify the specific suffix 'SL3' against the official onsemi datasheet to confirm packaging configuration and tape-and-reel specifications. Ensure the procurement channel provides valid traceability documentation consistent with onsemi quality standards. Cross-reference the part number with the manufacturer's latest product change notifications to ensure compliance with current manufacturing revisions.
Selection Notes
Select this component when designing circuits requiring robust switching of inductive loads at voltages up to 390 V. The integrated protection features simplify driver design by reducing external component count. Consider the thermal performance of the D2PAK package and the 14,000 ns fall time when evaluating switching losses and electromagnetic interference constraints in the target application environment.
Part Context
This IGBT belongs to the family of logic-level insulated gate bipolar transistors optimized for automotive ignition and fuel injection systems. It combines the high-efficiency switching of an IGBT with the ease of control of a MOSFET. The integration of protection circuits distinguishes it from standard discrete IGBTs, making it suitable for harsh automotive electrical environments where transient voltage spikes are common.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided source material. Verify compatibility with alternative parts based on pinout, voltage ratings, and thermal characteristics using official cross-reference data from onsemi.
