NGB8207ANT4G

$1.05

Description：IGBT 365V 20A 165W D2PAK3
Series：-

SKU:64db7b54be3e Category: Single IGBTs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：IGBT 365V 20A 165W D2PAK3
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Bulk
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：365 V
Current - Collector (Ic) (Max)：20 A
Current - Collector Pulsed (Icm)：50 A
Vce(on) (Max) @ Vge, Ic：2.2V @ 3.7V, 10A
Power - Max：165 W
Switching Energy：-
Input Type：Logic
Gate Charge：-
Td (on/off) @ 25°C：-
Test Condition：-
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package：D2PAK
Grade：-
Qualification：-

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NGB8207ANT4G

Overview

The NGB8207ANT4G is a logic-level Insulated Gate Bipolar Transistor (IGBT) from onsemi, packaged in a D2PAK. It features monolithic circuitry integrating ESD and overvoltage clamped protection for use in inductive coil drivers applications. The device has a collector-emitter voltage rating of 365 V and a continuous collector current of 20 A at 25°C case temperature. Key electrical parameters include a gate-emitter threshold voltage ranging from 1.2 V to 2.0 V at 25°C, and a maximum collector-to-emitter saturation voltage of 2.2 V at 10 A with a 4.5 V gate drive. The component supports an operating junction temperature range from -55°C to +175°C.

Feature Summary

Integrates ESD and overvoltage clamped protection within the monolithic circuitry
Features temperature compensated gate-collector voltage clamp to limit stress applied to load
Designed with low threshold voltage for interfacing power loads to logic or microprocessor devices
Includes integrated ESD diode protection

Applications

Ignition Systems
Direct Fuel Injection
Coil-on-Plug Applications
Driver-on-Coil Applications

Procurement Notes

Verify the specific ordering suffix T4G corresponds to the tape and reel packaging configuration before procurement. Confirm that the Pb-free designation aligns with environmental compliance requirements for the target assembly process. Ensure the D2PAK footprint matches the design layout specifications. Validate that the component's thermal resistance characteristics meet the system's heat dissipation needs under expected operating conditions.

Selection Notes

Select this IGBT for applications requiring high voltage switching up to 365 V and moderate current handling around 20 A. Consider the low saturation voltage for improved efficiency in inductive load driving scenarios. Evaluate the integrated protection features against external component counts to simplify the circuit design. Assess the thermal performance based on the junction-to-case resistance for appropriate heatsinking strategies.

Part Context

This component belongs to the NGB8207AN series of Ignition IGBTs manufactured by onsemi. It is designed specifically for automotive and industrial applications involving inductive coils. The series includes variants such as the NGB8207ABN, which shares similar electrical characteristics but may differ in specific testing or qualification criteria. The D2PAK package provides a robust solution for surface mount applications requiring efficient thermal management.