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Product Detailed Parameters
- Description：IGBT 365V 20A D2PAK
- Series：-
- Mfr：onsemi
- Package：Bulk
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：365 V
- Current - Collector (Ic) (Max)：20 A
- Current - Collector Pulsed (Icm)：50 A
- Vce(on) (Max) @ Vge, Ic：2.6V @ 4V, 20A
- Power - Max：165 W
- Switching Energy：-
- Input Type：Logic
- Gate Charge：-
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package：D2PAK
- Grade：-
- Qualification：-
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Overview
The NGB8207BNT4G is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by onsemi. It features a collector-emitter breakdown voltage of 365 V and a continuous collector current rating of 20 A. The device is designed for high-efficiency switching applications, offering low saturation voltage characteristics suitable for power conversion systems. It is housed in a D2PAK surface-mount package, providing robust thermal performance and mechanical stability for industrial and automotive environments.
Feature Summary
- Optimized for ignition system applications with enhanced switching performance
- N-channel configuration for efficient power control
- Surface-mount D2PAK package for reliable thermal dissipation
Applications
- Automotive ignition systems
- Industrial motor drives
- Power supply units
Procurement Notes
Verify the specific datasheet revision and RoHS compliance status directly with onsemi or authorized distributors before procurement. Ensure that the D2PAK footprint matches the target PCB design requirements. Confirm that the 365 V rating aligns with the system's maximum voltage stress conditions to prevent premature failure.
Selection Notes
Select this component when a 365 V IGBT with a 20 A current capacity is required for surface-mount assembly. Consider the D2PAK package constraints for thermal management and board space. Evaluate the switching speed and saturation voltage parameters against the specific efficiency targets of the application circuit.
Part Context
This part belongs to onsemi's portfolio of intelligent power and sensing technologies, specifically within the discrete IGBT category. It supports the company's focus on improving efficiency and reliability in automotive and industrial sectors. The NGB series typically offers optimized trade-offs between conduction losses and switching speeds for medium-power applications.
Replacement Considerations
Consult onsemi official documentation for direct pin-compatible substitutes. Verify electrical parameters such as Vces and Ic ratings match or exceed the original specifications. Ensure thermal resistance values are comparable to maintain system reliability.
