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Product Detailed Parameters
- Description：IGBT 440V 20A DPAK
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR)
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：440 V
- Current - Collector (Ic) (Max)：20 A
- Current - Collector Pulsed (Icm)：50 A
- Vce(on) (Max) @ Vge, Ic：1.9V @ 4.5V, 20A
- Power - Max：125 W
- Switching Energy：-
- Input Type：Logic
- Gate Charge：-
- Td (on/off) @ 25°C：-/5µs
- Test Condition：300V, 9A, 1kOhm, 5V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package：DPAK
- Grade：-
- Qualification：-
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Overview
The NGD8201NT4G is a logic-level N-channel IGBT in a DPAK package, designed for high-voltage and high-current switching. It features monolithic ESD protection and an integrated overvoltage clamp. Key electrical parameters include a collector-emitter voltage of 440 V, continuous collector current of 20 A at 25°C, and pulsed current of 50 A. The saturation voltage is 1.9 V max at 20 A and 4.5 V gate drive. Total power dissipation is 125 W at 25°C case temperature. Operating junction temperature ranges from -55°C to +175°C.
Feature Summary
- Integrates gate-emitter ESD protection and temperature-compensated gate-collector voltage clamp to limit load stress.
- Features low threshold voltage suitable for interfacing directly with logic or microprocessor devices.
- Utilizes a DPAK package to provide a smaller footprint for increased board space efficiency.
Applications
- Ignition systems
- Direct fuel injection circuits
- Coil-on-plug applications
- Driver-on-coil configurations
Procurement Notes
Verify the component status as discontinued before procurement planning. Confirm the specific suffix 'T4G' corresponds to the tape and reel packaging format containing 2500 units per manufacturer standard. Ensure compatibility with RoHS and REACH environmental standards required for the target assembly process.
Selection Notes
Select this device for applications requiring high voltage isolation with logic-level gate control. Evaluate thermal resistance requirements against the specified junction-to-case value. Consider the integrated clamping features for protecting sensitive loads in inductive switching environments without external components.
Part Context
This component belongs to the NGD8201 series of ignition IGBTs manufactured by onsemi. It shares functional similarities with the NGD8201AN variant but differs in specific electrical tolerances. The part is housed in the CASE 369C DPAK package, distinguishing it from higher-power TO-220 or D2PAK variants within the broader product line.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and electrical ratings if considering alternative manufacturers for legacy system maintenance.
