SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The NGD8205NT4G is a logic-level N-channel IGBT in a DPAK package, rated for 390 V collector-emitter voltage and 20 A continuous collector current. It integrates monolithic ESD protection and an overvoltage clamped gate-collector circuit to limit stress on inductive loads. The device features a low saturation voltage of 1.6 V maximum at 20 A and 4.5 V gate drive. Thermal resistance from junction to case is 1.2 °C/W, supporting operation across a temperature range of -55°C to +175°C.
Verify the component against official datasheet specifications before integration. Confirm that the ordering suffix 'T4G' corresponds to the tape and reel packaging format containing 2500 units per reel. Ensure compatibility with Pb-free soldering processes as indicated by the manufacturing standards.
Select this component when high-voltage switching with integrated load protection is required. The low saturation voltage minimizes conduction losses during operation. Evaluate thermal management requirements based on the specified junction-to-case thermal resistance to ensure reliable performance under continuous duty cycles.
This part belongs to the NGD8205N family of ignition IGBTs manufactured by onsemi. It shares core electrical characteristics with variants such as the NGD8205AN, differing primarily in specific parameter tolerances or testing conditions defined within the same product series documentation.
Public confirmed substitute part numbers include NGD8205N and NGD8205AN. Verify pinout compatibility and exact electrical ratings against the target application requirements before substitution.