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The onsemi NGP15N41CL is a logic-level N-channel Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage and high-current switching applications. It features monolithic circuitry integrating ESD protection and an over-voltage clamped gate-collector protection mechanism. The device offers a collector-emitter voltage of 440 VDC, a continuous collector current of 15 A at 25°C case temperature, and a pulsed collector current capability of 50 A. Total power dissipation reaches 107 W at 25°C with a thermal resistance junction-to-case of 1.4 °C/W. Operating temperatures range from -55°C to +175°C.
Verify the specific package variant required, as the NGP15N41CL designation corresponds to the TO-220 package. Confirm RoHS compliance status by checking for the 'G' suffix in the ordering information, as standard versions may differ. Ensure the procurement channel provides official datasheets matching the December 2011 Rev. 8 publication date to validate technical parameters against legacy documentation.
Select this component when designing ignition or fuel injection circuits requiring robust inductive load handling. The integrated gate-collector clamp reduces external component requirements for transient suppression. Evaluate the thermal resistance values based on the chosen mounting method, as junction-to-ambient resistance varies significantly between DPAK, D2PAK, and TO-220 packages under different board conditions.
This part belongs to the NGD/NGB/NGP15N41CL family of Ignition IGBTs manufactured by onsemi. The family shares identical electrical characteristics but differs in physical packaging: NGD for DPAK, NGB for D2PAK, and NGP for TO-220. All variants feature the same 15 A rating and 440 V breakdown voltage, allowing designers to choose the optimal thermal and spatial footprint for their specific PCB layout constraints.
Public confirmed substitute part numbers are not available in the provided source material.