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Product Detailed Parameters
- Description：IGBT 440 20A
- Series：*
- Mfr：onsemi
- Package：Bulk
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Current - Collector (Ic) (Max)：-
- Current - Collector Pulsed (Icm)：-
- Vce(on) (Max) @ Vge, Ic：-
- Power - Max：-
- Switching Energy：-
- Input Type：-
- Gate Charge：-
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
Download product information
Overview
The NGP8203N is a single Insulated Gate Bipolar Transistor (IGBT) manufactured by onsemi, designed for high-power switching applications. It features an N-channel configuration with a collector-emitter breakdown voltage of 440V and a continuous collector current rating of 20A. The device is housed in a TO-220AB package, suitable for through-hole mounting. This component serves as an ignition IGBT, optimized for robust performance in demanding power electronics environments requiring reliable high-voltage switching capabilities.
Feature Summary
- High voltage blocking capability up to 440V for industrial power applications
- Robust 20A continuous current handling for efficient power switching
- N-channel insulated gate structure for standard drive compatibility
- TO-220AB through-hole package design for effective thermal dissipation
Applications
- Ignition systems in automotive or industrial machinery
- General-purpose power switching circuits
- Inverter topologies requiring moderate voltage ratings
- Motor control driver stages
Procurement Notes
Verify the specific suffix codes against the official datasheet to ensure correct pinout and electrical characteristics, as variations may exist within the product line. Confirm that the TO-220AB package type matches your PCB footprint requirements. Cross-reference the manufacturer part number with authorized distributors to ensure authenticity and traceability. Check for any recent revisions in the marking specifications or thermal data before finalizing the bill of materials.
Selection Notes
Select this component when a 440V rated IGBT with 20A current capacity is required for through-hole assembly. The TO-220AB package provides adequate thermal management for medium-power applications without requiring complex heatsinking solutions. Ensure the driving circuitry can support the gate charge requirements typical for this class of IGBTs. Consider the switching speed characteristics relative to the application's frequency constraints.
Part Context
This IGBT belongs to onsemi's portfolio of discrete power semiconductors aimed at industrial and automotive markets. It complements other low-to-medium voltage IGBTs in the company's lineup, offering a balance between conduction losses and switching performance. The TO-220 form factor is a standard industry choice for prototyping and production runs where board space allows for larger packages.
Replacement Considerations
Consult the official cross-reference list for direct replacements. Verify that any substitute part maintains the 440V V(BR)CES and 20A IC ratings. Ensure the replacement uses the same TO-220AB pinout to avoid PCB redesign. Check if alternative parts offer improved switching times or lower saturation voltages if performance upgrades are needed.
