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Product Detailed Parameters
- Description：IGBT 600V 20A TO-220F-3FS
- Series：-
- Mfr：onsemi
- Package：Tube,Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：20 A
- Current - Collector Pulsed (Icm)：72 A
- Vce(on) (Max) @ Vge, Ic：1.7V @ 15V, 10A
- Power - Max：40 W
- Switching Energy：-
- Input Type：Standard
- Gate Charge：55 nC
- Td (on/off) @ 25°C：40ns/145ns
- Test Condition：300V, 10A, 30Ohm, 15V
- Reverse Recovery Time (trr)：70 ns
- Operating Temperature：150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3 Full Pack
- Supplier Device Package：TO-220F-3FS
- Grade：-
- Qualification：-
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Overview
The NGTB10N60FG is an N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by onsemi. It features a maximum collector-emitter voltage of 600 V and a maximum continuous collector current of 20 A. The device has a maximum gate-emitter threshold voltage of 6.5 V and a maximum gate-emitter voltage rating of 20 V. It operates at a maximum junction temperature of 150 °C with an absolute maximum power dissipation of 40 W. The component is housed in a TO-220F3 package, identified by manufacturer code 221AM, and is lead-free compliant.
Feature Summary
- Utilizes Field Stop trench technology for optimized switching performance and low conduction loss.
- Provides high non-clamping inductive switching (UIS) capability to enhance system reliability during transient events.
Applications
- Uninterruptible Power Supply (UPS) systems
- Solar inverters
- Motor control applications
Procurement Notes
Verify the specific datasheet revision and ordering suffix when sourcing components. Confirm that the received parts match the TO-220F3 package style and lead-free specifications. Cross-reference the manufacturer part number against official onsemi documentation to ensure authenticity and correct electrical ratings before integration into designs.
Selection Notes
Select this component for circuits requiring 600 V blocking capability and moderate current handling up to 20 A. Ensure the thermal management design supports the 40 W power dissipation limit at the intended operating temperature. Verify that the gate drive voltage remains within the specified 20 V maximum rating to prevent device damage.
Part Context
This IGBT belongs to onsemi's broader portfolio of power semiconductors, which includes various MOSFETs and diodes. The company leverages extensive intellectual property in trench field stop technologies across its product lines. This specific model is part of the lineup designed for general-purpose power switching applications where efficiency and robustness are required.
Replacement Considerations
Consult official substitution guides for compatible alternatives. Verify pinout compatibility and electrical parameter equivalence, specifically checking collector-emitter voltage and current ratings, before replacing the original component in existing assemblies.
