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The onsemi NGTB15N120FLWG is a Field Stop IGBT featuring an N-channel configuration housed in a TO-247 package. It supports continuous collector currents up to 15 A and withstands collector-emitter voltages of 1200 V. The device operates within a junction temperature range of -55°C to 175°C, with a maximum power dissipation of 230 W. Key electrical parameters include a collector-emitter saturation voltage of 1.9 V at rated current and a gate-emitter threshold voltage ranging from 3.0 V to 6.0 V. The component utilizes through-hole mounting for secure PCB integration.
Verify the specific suffix against official datasheets to confirm exact electrical tolerances and pinout configurations. Ensure compatibility with existing thermal management solutions before finalizing procurement decisions. Cross-reference manufacturer documentation for any recent revisions or obsolescence notices.
Select this component based on its 1200 V blocking capability and 15 A current rating requirements. Evaluate thermal resistance characteristics against the application's heat dissipation needs. Confirm that the gate drive circuitry aligns with the specified threshold voltage ranges for optimal switching efficiency.
This part belongs to onsemi's Field Stop IGBT series, designed for medium-power applications requiring efficient switching. It complements other variants in the NGTB family by offering specific current and voltage ratings tailored for industrial and consumer electronics power stages.
Direct substitutes may include the NGTB15N120IHWG or NGTB20N120FLWG, provided their electrical parameters meet the design requirements. Verify pin compatibility and thermal characteristics before substitution.