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Product Detailed Parameters
- Description：IGBT TRENCH FS 1200V 30A TO-247
- Series：-
- Mfr：onsemi
- Package：Bulk,Tube,Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：30 A
- Current - Collector Pulsed (Icm)：60 A
- Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 15A
- Power - Max：333 W
- Switching Energy：340µJ (off)
- Input Type：Standard
- Gate Charge：160 nC
- Td (on/off) @ 25°C：-/170ns
- Test Condition：600V, 15A, 10Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247-3
- Grade：-
- Qualification：-
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Overview
The onsemi NGTB15N120IHRWG is a Field Stop trench IGBT with an integrated monolithic free-wheeling diode, housed in a TO-247 package. It features a collector-emitter voltage (VCES) of 1200 V and a continuous collector current (IC) of 30 A at 25°C case temperature. The device exhibits a maximum collector-emitter saturation voltage (VCEsat) of 2.50 V at 15 A and 175°C junction temperature. Switching loss (Eoff) is rated at 0.34 mJ at 600 V and 15 A. Power dissipation reaches 333 W at 25°C case temperature, with a thermal resistance junction-to-case (RthJC) of 0.45 °C/W. Operating junction temperature ranges from -40°C to +175°C.
Feature Summary
- Field Stop Trench construction for low on-state voltage and minimal switching loss
- Integrated monolithic free-wheeling diode for single die reliability
- Optimized thermal performance for inductive heating applications
Applications
- Inductive Heating
- Consumer Appliances
- Soft Switching
Procurement Notes
Verify the ordering suffix 'WG' confirms Pb-Free status as documented. Confirm the specific part number matches the datasheet revision and marking diagram requirements. Ensure component authenticity through authorized distribution channels to guarantee compliance with RoHS standards and original manufacturer specifications.
Selection Notes
Select this component for resonant or soft switching circuits requiring high efficiency. Evaluate thermal management based on the 0.45 °C/W junction-to-case resistance. Consider the 1200 V rating for high-voltage industrial environments. Verify gate drive compatibility with the specified threshold and charge parameters.
Part Context
This device belongs to onsemi's Field Stop IGBT series designed for cost-effective power conversion. It integrates a trench MOS gate structure with a field stop layer to optimize switching characteristics. The inclusion of a monolithic diode simplifies circuit design by eliminating external components typically required for freewheeling paths.
Replacement Considerations
Cross-reference with other onsemi Field Stop IGBTs in the TO-247 package. Verify pinout compatibility and electrical ratings before substitution. Consult official replacement lists for discontinued variants within the same product family.
