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Product Detailed Parameters
- Description：IGBT TRENCH FS 1200V 30A TO-247
- Series：-
- Mfr：onsemi
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：30 A
- Current - Collector Pulsed (Icm)：60 A
- Vce(on) (Max) @ Vge, Ic：2.45V @ 15V, 15A
- Power - Max：278 W
- Switching Energy：360µJ (off)
- Input Type：Standard
- Gate Charge：120 nC
- Td (on/off) @ 25°C：-/130ns
- Test Condition：600V, 15A, 10Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247-3
- Grade：-
- Qualification：-
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Overview
The onsemi NGTB15N120IHWG is a Field Stop N-channel Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage power switching applications. It features a maximum continuous collector current of 30 A and a breakdown voltage rating of 1200 V. The device operates within a junction temperature range of -40 °C to +175 °C and dissipates up to 278 W of power. Packaged in a three-pin TO-247 through-hole housing, it supports switching speeds up to 1 MHz with a maximum gate-emitter voltage of ±20 V.
Feature Summary
- Field Stop technology architecture for optimized switching performance
- High thermal stability supporting operation up to 175 °C
- Robust 1200 V blocking capability for industrial power systems
Applications
- Industrial motor drives and inverters
- Switched-mode power supplies (SMPS)
- Welding equipment power stages
Procurement Notes
Verify the specific suffix 'WG' against the manufacturer's official datasheet to confirm compliance with RoHS standards and lead-free specifications. Ensure the ordering part number matches the exact electrical ratings and package dimensions required by the design. Cross-reference the component with authorized distributors to validate authenticity and traceability before procurement.
Selection Notes
Select this component when a 1200 V IGBT with a 30 A continuous current rating is required. The TO-247 package facilitates effective heat dissipation for moderate power levels. Verify that the system's gate drive voltage does not exceed the ±20 V limit. Consider the 278 W power dissipation rating relative to the available heatsinking capacity in the final assembly.
Part Context
This device belongs to onsemi's Field Stop IGBT series, which utilizes advanced trench gate technology to reduce switching losses compared to standard planar designs. The NGTB15N120IHWG shares the same voltage class as higher-current variants like the NGTB20N120IHWG but offers lower conduction losses at its specific 30 A operating point.
Replacement Considerations
Direct pin-compatible substitutes include the NGTB20N120IHWG and NGTB15N120RWT4G. Verify that the alternative part's saturation voltage and switching energy parameters meet the original circuit requirements.
