NGTB15N60R2FG

Overview

The onsemi NGTB15N60R2FG is a single N-channel Insulated Gate Bipolar Transistor (IGBT) designed for high-power switching applications. It features a maximum collector-emitter voltage (VCEO) of 600 V and a continuous collector current (IC) of 30 A at 25 °C. The device utilizes trench field-stop technology to optimize conduction and switching performance, achieving a typical collector-emitter saturation voltage (VCEsat) of 1.8 V at IC = 15 A. Packaged in the TO-220F FullPak format with an isolated tab, it supports through-hole mounting and offers a power dissipation rating of 175 W. The component operates within a junction temperature range of -40 °C to +175 °C.

Feature Summary

• Trench field-stop technology for optimized low conduction losses and fast switching characteristics
• High short-circuit capability ensuring robustness against transient overload events
• Isolated thermal tab design facilitating efficient heat transfer to heatsinks

Applications

• Motor drive inverters
• Uninterruptible power supplies (UPS)
• Switch-mode power supplies (SMPS)

Procurement Notes

Verify the specific ordering suffix and tape/reel or tube packaging configuration directly with the manufacturer or authorized distributors before procurement. Confirm RoHS compliance status and lead times as these attributes are subject to change based on production batches and regional availability constraints.

Selection Notes

Select this component when a 600 V rating and 30 A continuous current capacity are required in a cost-effective TO-220F package. Ensure the application's thermal management strategy can handle the specified 175 W power dissipation at the expected ambient temperatures. Verify that the gate drive voltage aligns with the device's threshold and saturation requirements for optimal efficiency.

Part Context

This IGBT belongs to onsemi's broader portfolio of 600 V trench field-stop devices, which are engineered for general-purpose industrial and consumer power conversion. The TO-220F FullPak package provides a balance between electrical isolation and thermal performance, making it suitable for medium-power density designs where standard through-hole mounting is preferred over surface-mount alternatives.

Replacement Considerations

Direct pin-compatible replacements may include other 600 V, 30 A IGBTs in the TO-220F package from onsemi or other manufacturers, provided their VCEsat, switching speeds, and thermal resistance values meet or exceed the original specifications.