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Product Detailed Parameters
- Description：IGBT 1200V 40A TO-247-3
- Series：-
- Mfr：onsemi
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：40 A
- Current - Collector Pulsed (Icm)：200 A
- Vce(on) (Max) @ Vge, Ic：2.2V @ 15V, 20A
- Power - Max：192 W
- Switching Energy：700µJ (off)
- Input Type：Standard
- Gate Charge：200 nC
- Td (on/off) @ 25°C：-/235ns
- Test Condition：600V, 20A, 10Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247-3
- Grade：-
- Qualification：-
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Overview
The onsemi NGTB20N120IHLWG is a Field-Stop trench-gate IGBT designed for high-efficiency power switching. It features an N-channel configuration housed in a TO-247 package with three pins for through-hole mounting. Key electrical parameters include a maximum continuous collector current (Ic) of 50 A and a maximum collector-emitter voltage (Vceo) of 1200 V. The device supports a maximum power dissipation (Pd) of 192 W, operates within a temperature range of -55°C to +150°C, and offers a switching speed of 1 MHz.
Feature Summary
- Field-Stop technology implementation for optimized conduction and switching performance
- Trench-gate architecture enhancing efficiency at high voltages
- Robust thermal management capabilities suitable for demanding industrial environments
Applications
- Industrial motor drives and inverters
- High-frequency power supplies
- Uninterruptible power supply (UPS) systems
Procurement Notes
Verify the specific suffix 'LWG' against official datasheets to confirm exact binning or testing variations. Ensure compatibility with standard TO-247 footprint requirements during PCB layout. Confirm RoHS compliance status directly from the manufacturer's documentation prior to integration into regulated assemblies.
Selection Notes
Select this component when a 1200 V rating and 50 A continuous current capacity are required in a single-chip IGBT format. The TO-247 package facilitates effective heat sinking for moderate-to-high power applications. Consider the 150°C junction temperature limit for thermal design calculations under varying load conditions.
Part Context
This part belongs to onsemi’s Field-Stop IGBT portfolio, which utilizes advanced trench gate technology to reduce switching losses compared to conventional planar devices. The series targets applications requiring high reliability and efficiency in medium-power conversion stages.
Replacement Considerations
Direct substitutes may include other 1200 V, 50 A Field-Stop IGBTs in TO-247 packages from onsemi, such as the NGTB25N120IHLWG, provided pinout and thermal characteristics match the existing design constraints.
