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Product Detailed Parameters
- Description：IGBT TRENCH FS 1200V 40A TO-247
- Series：-
- Mfr：onsemi
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：40 A
- Current - Collector Pulsed (Icm)：120 A
- Vce(on) (Max) @ Vge, Ic：2.45V @ 15V, 20A
- Power - Max：384 W
- Switching Energy：450µJ (off)
- Input Type：Standard
- Gate Charge：225 nC
- Td (on/off) @ 25°C：-/235ns
- Test Condition：600V, 20A, 10Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247
- Grade：-
- Qualification：-
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Overview
The onsemi NGTB20N120IHRWG is a Field Stop (FS) Trench Insulated Gate Bipolar Transistor with an integrated monolithic free-wheeling diode. It operates at a collector-emitter voltage of 1200 V and supports a continuous collector current of 40 A at 25°C case temperature, derating to 20 A at 100°C. The device features a low saturation voltage of 2.10 V at 20 A and a turn-off switching loss of 0.45 mJ under standard test conditions. It is housed in a TO-247 package with a thermal resistance junction-to-case of 0.39 °C/W and functions within a junction temperature range of -40°C to +175°C.
Feature Summary
- Field Stop Trench construction for optimized switching performance
- Monolithic integration of IGBT and free-wheeling diode
- Designed for low losses in inductive heating applications
Applications
- Inductive Heating
- Consumer Appliances
- Soft Switching
Procurement Notes
Verify the ordering suffix 'WG' confirms lead-free packaging status as documented in the datasheet. Confirm that the specific revision matches the required technical specifications. Ensure the component is sourced from authorized channels to guarantee authenticity and compliance with RoHS standards. Check for any specific handling requirements related to the TO-247 package during assembly.
Selection Notes
Select this component for applications requiring robust field stop technology and low on-state voltage. Consider the 1200 V rating and 40 A current capability for high-power switching circuits. Evaluate the thermal management needs based on the 0.39 °C/W junction-to-case resistance. Verify compatibility with soft-switching topologies where minimal switching loss is critical for system efficiency.
Part Context
This part belongs to onsemi's NGTB series of Field Stop IGBTs, designed for cost-effective single-die solutions. It shares the FS Trench architecture with other models in the lineup but offers specific current and voltage ratings tailored for demanding switching environments. The series targets industrial and consumer power conversion applications requiring high reliability.
Replacement Considerations
Direct replacements must match the 1200 V rating, TO-247 package, and Field Stop technology. Verify equivalent current ratings and switching characteristics. Consult the official datasheet for pinout compatibility and thermal parameters before substituting.
