NGTB20N120IHSWG

Description：IGBT TRENCH FS 1200V 40A TO-247
Series：-

SKU:d7ef25faec8c Category: Single IGBTs Brand: onsemi

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：IGBT TRENCH FS 1200V 40A TO-247
Series：-
Mfr：onsemi
Package：Tube
IGBT Type：Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)：1200 V
Current - Collector (Ic) (Max)：40 A
Current - Collector Pulsed (Icm)：120 A
Vce(on) (Max) @ Vge, Ic：2.4V @ 15V, 20A
Power - Max：156 W
Switching Energy：650µJ (off)
Input Type：Standard
Gate Charge：155 nC
Td (on/off) @ 25°C：-/160ns
Test Condition：600V, 20A, 10Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：TO-247-3
Grade：-
Qualification：-

Download product information

NGTB20N120IHSWG

Overview

The onsemi NGTB20N120IHSWG is a Field Stop (FS) Trench Insulated Gate Bipolar Transistor (IGBT) with an integrated free-wheeling diode, housed in a TO-247 package. It features a collector-emitter voltage (Vces) of 1200 V and a continuous collector current (Ic) of 40 A at 25°C case temperature. The device exhibits a maximum saturation voltage (Vcesat) of 2.4 V at 20 A and a turn-off switching loss (Eoff) of 0.65 mJ at 25°C. Thermal resistance from junction to case is 0.80 °C/W for the IGBT and 2.0 °C/W for the diode. Operating junction temperature ranges from -55°C to +150°C.

Feature Summary

Field Stop Trench construction provides low on-state voltage and minimal switching loss.
Integrated rugged co-packaged free-wheeling diode with low forward voltage.
Optimized thermal performance specifically for induction heating applications.

Applications

Inductive Heating
Consumer Appliances
Soft Switching

Procurement Notes

Verify component authenticity by checking the marking diagram against the physical device. Confirm the ordering suffix matches the required specifications. Ensure that the procurement channel provides valid traceability documentation. Cross-reference the datasheet revision date with the manufacturing batch to ensure technical consistency.

Selection Notes

Select this component for designs requiring high-voltage handling with integrated diode functionality. Evaluate thermal management requirements based on the specified junction-to-case resistance values. Consider the operating temperature range limits when designing for extreme environmental conditions. Verify gate drive compatibility with the specified threshold and charge parameters.

Part Context

This part belongs to the NGTB series of Field Stop IGBTs from onsemi. It shares the TO-247 form factor with other variants in the lineup but differs in specific electrical ratings and internal architecture. The series targets industrial motor control and consumer power conversion applications.

Replacement Considerations

Direct substitutes within the same family include NGTB20N120IHWG and NGTB25N120FL3WG. Verify pinout compatibility and thermal characteristics before implementation. Electrical parameters may vary between different suffixes; consult respective datasheets for detailed comparison.