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Product Detailed Parameters
- Description：IGBT 1200V 50A TO-247-3
- Series：-
- Mfr：onsemi
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：50 A
- Current - Collector Pulsed (Icm)：200 A
- Vce(on) (Max) @ Vge, Ic：2.3V @ 15V, 25A
- Power - Max：192 W
- Switching Energy：800µJ (off)
- Input Type：Standard
- Gate Charge：200 nC
- Td (on/off) @ 25°C：-/235ns
- Test Condition：600V, 25A, 10Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247-3
- Grade：-
- Qualification：-
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Overview
The onsemi NGTB25N120IHLWG is a Field-Stop IGBT module featuring an integrated free-wheeling diode. It operates with a maximum collector-emitter voltage of 1200 V and supports a continuous collector current of 25 A. The device dissipates up to 192 W of power within a TO-247 package designed for through-hole mounting. Key electrical parameters include a maximum collector-emitter saturation voltage of 1.85 V and a gate-emitter voltage rating of ±20 V. The component functions reliably across a temperature range from -55 °C to +150 °C.
Feature Summary
- Incorporates a rugged co-packaged free-wheeling diode engineered for low forward voltage characteristics.
Applications
- Industrial motor drives
- Switch-mode power supplies
- High-frequency inverter circuits
Procurement Notes
Verify the specific suffix against official datasheets to confirm pinout compatibility and thermal specifications. Ensure the procurement channel provides original manufacturer documentation to validate authenticity. Cross-reference the part number with authorized distributor catalogs to confirm current production status and regional availability constraints.
Selection Notes
Select this component when designing circuits requiring high-voltage isolation combined with efficient freewheeling capabilities. The integrated diode reduces board space requirements compared to discrete solutions. Evaluate thermal management needs carefully, as the TO-247 package limits heat dissipation to 192 W under standard conditions.
Part Context
This model belongs to the NGTB series of insulated-gate bipolar transistors manufactured by onsemi. The series utilizes Field-Stop technology to optimize switching performance and conduction losses. It serves as a discrete solution for medium-power applications where reliability and compact packaging are prioritized over modular assembly.
Replacement Considerations
The NGTB25N120LWG is a related variant within the same product family. Verify if the absence of the integrated diode in alternative models meets the circuit design requirements before substitution.
