ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：IGBT TRENCH 1200V 50A TO-247-3
- Series：-
- Mfr：onsemi
- Package：Tube
- IGBT Type：Trench
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：50 A
- Current - Collector Pulsed (Icm)：100 A
- Vce(on) (Max) @ Vge, Ic：2.4V @ 15V, 25A
- Power - Max：385 W
- Switching Energy：1.95mJ (on), 600µJ (off)
- Input Type：Standard
- Gate Charge：178 nC
- Td (on/off) @ 25°C：87ns/179ns
- Test Condition：600V, 25A, 10Ohm, 15V
- Reverse Recovery Time (trr)：154 ns
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247-3
- Grade：-
- Qualification：-
Download product information
Overview
The onsemi NGTB25N120SWG is a single N-channel Insulated Gate Bipolar Transistor (IGBT) designed for high-power switching applications. It features a robust Trench construction and belongs to the Field Stop II technology family. The device supports a maximum continuous collector current of 50 A and withstands a collector-emitter voltage of 1200 V. Key electrical parameters include a maximum power dissipation of 349 W, a collector-emitter saturation voltage of 2 V, and a gate-emitter voltage rating of ±20 V. It operates within a temperature range of -55°C to +175°C and is housed in a TO-247 package.
Feature Summary
- Features robust Trench construction for superior performance in demanding switching environments
- Utilizes Field Stop II technology to enhance efficiency and thermal stability
- Designed for high-voltage insulation with 1200 V blocking capability
Applications
- Inverter welding systems
- Industrial motor drives
- High-frequency power supplies
Procurement Notes
Verify the specific suffix 'WG' against official datasheets to confirm RoHS compliance and packaging details. Ensure that the selected component matches the required thermal resistance and pin configuration for your PCB layout. Cross-reference the manufacturer's latest documentation to confirm availability status and any potential product change notices affecting this specific part number before finalizing procurement.
Selection Notes
Select this IGBT when a 1200 V rating and 50 A continuous current capacity are required for high-efficiency switching. The Trench construction offers lower saturation voltage compared to standard planar devices, improving conduction losses. Consider the TO-247 package for through-hole mounting where higher thermal dissipation is necessary. Evaluate the ±20 V gate drive requirements to ensure compatibility with existing control circuitry.
Part Context
This component is part of onsemi's discrete IGBT lineup, specifically engineered for industrial power electronics. It complements other models like the NGTB25N120FL3WG by offering distinct performance characteristics tailored for different application constraints. The device represents a solution for balancing switching speed and conduction loss in medium-to-high power converters.
Replacement Considerations
Direct substitutes may include the NGTB25N120FL2WG or NGTB25N120IHL, provided voltage and current ratings align with system requirements. Verify pinout compatibility and thermal characteristics before substitution. Consult official replacement guides to ensure equivalent performance in terms of switching speed and saturation voltage.
