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The NGTB30N120FL2WG is a single N-channel Insulated Gate Bipolar Transistor (IGBT) from the Field Stop II series by onsemi. It features a maximum collector-emitter voltage of 1200 V and a continuous collector current of 30 A at 25°C. The device operates with a maximum power dissipation of 260 W and supports junction temperatures up to 175°C. Packaged in a TO-247 through-hole housing, it utilizes trench technology for optimized switching performance.
Verify component authenticity against official onsemi documentation. Confirm package integrity and pin configuration match the TO-247 standard. Ensure storage conditions comply with moisture sensitivity levels. Cross-reference datasheet revisions to confirm parameter consistency before integration into design specifications.
Select this component for designs requiring 1200 V blocking capability with moderate current handling. Compare saturation voltage and switching times against alternative IGBTs in the same voltage class. Evaluate thermal management requirements based on the 260 W dissipation rating and TO-247 thermal resistance characteristics for the specific application environment.
This part belongs to the NGTB series of Field Stop II IGBTs. It shares architectural similarities with variants like NGTB30N120LWG but differs in specific electrical parameters and optimization targets within the 1200 V product line. The series is designed for general-purpose high-power switching applications.
Direct substitutes include NGTB30N120LWG and NGTB30N120IHLWG. Verify pinout compatibility and ensure equivalent voltage and current ratings. Check datasheet revisions for any changes in thermal or electrical characteristics before substitution.