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Product Detailed Parameters
- Description：IGBT TRENCH FS 1200V 60A TO-247
- Series：-
- Mfr：onsemi
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：60 A
- Current - Collector Pulsed (Icm)：320 A
- Vce(on) (Max) @ Vge, Ic：2.2V @ 15V, 30A
- Power - Max：260 W
- Switching Energy：1mJ (off)
- Input Type：Standard
- Gate Charge：420 nC
- Td (on/off) @ 25°C：-/360ns
- Test Condition：600V, 30A, 10Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247-3
- Grade：-
- Qualification：-
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Overview
The onsemi NGTB30N120IHLWG is a Field Stop (FS) Trench Insulated Gate Bipolar Transistor with an integrated free-wheeling diode. It operates at a collector-emitter voltage of 1200 V and supports a continuous collector current of 30 A at TC = 100°C, or 60 A at TC = 25°C. The device features a low saturation voltage of 1.75 V at IC = 30 A and TJ = 25°C. Turn-off switching loss is rated at 1.0 mJ under standard test conditions (VCC = 600 V, IC = 30 A, Rg = 10 Ω). Total gate charge is 420 nC. It utilizes a TO-247 package with a junction-to-case thermal resistance of 0.48 °C/W for the IGBT.
Feature Summary
- Field Stop Trench construction provides low on-state voltage and minimal switching loss.
- Integrated rugged co-packaged free-wheeling diode with low forward voltage.
- Optimized specifically for low case temperature environments in IH cooker applications.
Applications
- Inductive Heating
- Consumer Appliances
- Soft Switching
Procurement Notes
Verify the component against the official datasheet specifications to ensure compatibility with your circuit requirements. Confirm that the TO-247 package dimensions align with your PCB layout constraints. Ensure proper thermal management is implemented given the specified power dissipation ratings. Check for RoHS compliance status if required by your manufacturing standards.
Selection Notes
Select this component for designs requiring high-voltage handling with efficient soft-switching capabilities. The integrated diode simplifies circuit topology compared to discrete solutions. Consider the thermal resistance values when designing heatsinking systems. Verify gate drive requirements match the specified threshold and charge parameters for optimal switching performance.
Part Context
This part belongs to onsemi's IGBT portfolio utilizing Field Stop technology. It is designed to replace older planar technologies in high-frequency applications. The specific suffix indicates lead-free packaging. It serves as a robust solution for consumer electronics where efficiency and thermal performance are critical design factors.
Replacement Considerations
Direct substitutes within the same series include NGTB30N120IHRWG and NGTB30N120IHSWG. These variants share similar electrical characteristics but may differ in specific packaging or regional availability details. Always verify pinout and thermal parameters before substitution.
