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Product Detailed Parameters
- Description：IGBT TRENCH FS 1200V 60A TO-247
- Series：-
- Mfr：onsemi
- Package：Tube,Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：60 A
- Current - Collector Pulsed (Icm)：200 A
- Vce(on) (Max) @ Vge, Ic：2.4V @ 15V, 30A
- Power - Max：192 W
- Switching Energy：1mJ (off)
- Input Type：Standard
- Gate Charge：220 nC
- Td (on/off) @ 25°C：-/210ns
- Test Condition：600V, 30A, 10Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247-3
- Grade：-
- Qualification：-
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Overview
The onsemi NGTB30N120IHSWG is a Field Stop (FS) Trench Insulated Gate Bipolar Transistor with an integrated free-wheeling diode. It operates at a collector-emitter voltage of 1200 V and supports a continuous collector current of 30 A at 100°C case temperature, rising to 60 A at 25°C. The device features a maximum power dissipation of 192 W at 25°C and a junction temperature range of -55°C to +150°C. Key electrical parameters include a saturation voltage of 2.0 V at 30 A, a total gate charge of 220 nC, and a turn-off switching loss of 1.0 mJ under standard test conditions.
Feature Summary
- Field Stop Trench construction for low on-state voltage and minimal switching loss
- Integrated rugged co-packaged free-wheeling diode with low forward voltage
- Optimized thermal performance for low case temperature applications
Applications
- Inductive heating systems
- Consumer appliances requiring soft switching
- IH cooker applications
Procurement Notes
Verify the component against the official datasheet specifications before integration. Confirm that the TO-247 package dimensions and pinout match the design requirements. Ensure the operating environment stays within the specified thermal limits to maintain reliability. Check for RoHS compliance status if required by local regulations.
Selection Notes
Select this component for designs prioritizing low conduction losses in resonant or soft-switching topologies. The integrated diode simplifies circuit architecture compared to discrete solutions. Evaluate thermal management capabilities to ensure the junction temperature remains within the safe operating area during peak load conditions.
Part Context
This part belongs to onsemi's IGBT portfolio utilizing Field Stop technology. It is designed as a cost-effective solution for demanding switching applications where efficiency and thermal robustness are critical. The device complements other high-voltage discrete semiconductors in the manufacturer's standard product line.
Replacement Considerations
Direct substitutes may include models from the same series with similar voltage and current ratings, such as the NGTB30N120IHLWG or NGTB30N120IHRWG. Verify pin compatibility and thermal characteristics when considering alternatives.
