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Product Detailed Parameters
- Description：IGBT TRENCH FS 1350V 60A TO-247
- Series：-
- Mfr：onsemi
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：1350 V
- Current - Collector (Ic) (Max)：60 A
- Current - Collector Pulsed (Icm)：120 A
- Vce(on) (Max) @ Vge, Ic：3V @ 15V, 30A
- Power - Max：394 W
- Switching Energy：630µJ (off)
- Input Type：Standard
- Gate Charge：220 nC
- Td (on/off) @ 25°C：-/200ns
- Test Condition：600V, 30A, 10Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247-3
- Grade：-
- Qualification：-
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Overview
The NGTB30N135IHR1WG is a single N-channel Insulated Gate Bipolar Transistor (IGBT) from onsemi, featuring an integrated monolithic free-wheeling diode. It utilizes Trench Field-Stop technology to achieve low conduction and switching losses. The device is rated for a maximum collector-emitter voltage of 1350 V and a continuous collector current of 60 A at 25°C. It is housed in a TO-247-3 package designed for high-power applications, offering robust performance with a typical saturation voltage of 2.15 V at 30 A.
Feature Summary
- Integrates a rugged monolithic free-wheeling diode with low forward voltage characteristics
- Employs Trench Field-Stop technology for optimized switching and conduction efficiency
- Designed for high thermal stability and reliable operation in demanding power environments
Applications
- Motor drive inverters
- Switched-mode power supplies (SMPS)
- Induction heating systems
Procurement Notes
Verify the specific suffix 'R1' against the official datasheet to confirm manufacturing origin or assembly site variations. Ensure compatibility with existing thermal management solutions, as the TO-247-3 package requires adequate heatsinking to maintain junction temperatures within specified limits during high-current operation.
Selection Notes
Select this component for designs requiring 1350 V blocking capability and 60 A continuous current handling. Compare total loss calculations against alternative IGBTs based on the specific switching frequency and load profile. Ensure gate drive voltages align with the standard ±15 V recommendation for optimal performance and safe operating area adherence.
Part Context
This part belongs to the NGTB series of IGBTs from onsemi, which are engineered for medium to high-power conversion applications. The series is characterized by the integration of fast recovery diodes, simplifying circuit design for half-bridge and full-bridge topologies commonly found in industrial power electronics.
Replacement Considerations
Direct pin-compatible alternatives within the same voltage and current class include the NGTB30N135IHRWG. Verify electrical parameters such as Vce(sat) and switching energies before substitution to ensure system performance remains unchanged.
