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Product Detailed Parameters
- Description：IGBT 600V 100A TO-247-3
- Series：-
- Mfr：onsemi
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：100 A
- Current - Collector Pulsed (Icm)：60 A
- Vce(on) (Max) @ Vge, Ic：1.6V @ 15V, 30A
- Power - Max：225 W
- Switching Energy：310µJ (on), 1.14mJ (off)
- Input Type：Standard
- Gate Charge：166 nC
- Td (on/off) @ 25°C：100ns/390ns
- Test Condition：300V, 30A, 30Ohm, 15V
- Reverse Recovery Time (trr)：70 ns
- Operating Temperature：175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247-3
- Grade：-
- Qualification：-
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Overview
The NGTB30N60L2WG is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by onsemi. It features a maximum collector-emitter voltage (VCEO) of 600 V and a continuous collector current (Ic) of 30 A at 25°C. The device utilizes TRENCHSTOP™ technology to optimize switching performance and conduction losses. It is housed in a TO-247 package with through-hole mounting. Key electrical parameters include a maximum power dissipation (Pd) of 187 W, a collector-emitter saturation voltage (VCE(sat)) of 1.9 V at 30 A, and a gate-emitter threshold voltage range of 3.0 V to 5.0 V. The operating temperature range extends from -55°C to +175°C.
Feature Summary
- TRENCHSTOP™ technology for optimized trade-off between switching speed and conduction loss
- High short-circuit capability for robust operation in demanding environments
- Low cross-conduction susceptibility due to optimized capacitance ratios
Applications
- Motor drives and inverters
- Switched-mode power supplies (SMPS)
- Induction heating applications
Procurement Notes
Verify the specific suffix WG against official onsemi documentation to confirm pinout and thermal characteristics. Ensure compatibility with existing heatsinking solutions given the TO-247 form factor. Check for end-of-life notices or alternative recommendations directly from the manufacturer before finalizing procurement plans.
Selection Notes
Select this component when a 600V rating and 30A continuous current are required in a standard TO-247 package. Consider the TRENCHSTOP™ generation for improved efficiency compared to older IGBT technologies. Verify that the gate drive circuitry supports the specified threshold voltage range and total gate charge requirements for the target switching frequency.
Part Context
This part belongs to onsemi's TRENCHSTOP™ IGBT family, designed for high-efficiency power switching. It complements other devices in the series offering different voltage and current ratings within the same package style, allowing for design scalability across various power levels while maintaining consistent mechanical integration.
Replacement Considerations
Direct replacements may include the NGTB30N60L2TF1G or NGTB30N60LW, provided pinouts and electrical specifications match exactly. Always verify datasheet revisions and any changes in thermal resistance or switching times before substituting.
