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Product Detailed Parameters
- Description：IGBT TRENCH FS 600V 60A TO-247-3
- Series：-
- Mfr：onsemi
- Package：Tube,Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：60 A
- Current - Collector Pulsed (Icm)：120 A
- Vce(on) (Max) @ Vge, Ic：2.2V @ 15V, 30A
- Power - Max：189 W
- Switching Energy：750µJ (on), 540µJ (off)
- Input Type：Standard
- Gate Charge：90 nC
- Td (on/off) @ 25°C：57ns/109ns
- Test Condition：400V, 30A, 10Ohm, 15V
- Reverse Recovery Time (trr)：200 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247-3
- Grade：-
- Qualification：-
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Overview
The onsemi NGTB30N60SWG is a Field Stop Trench Insulated Gate Bipolar Transistor (IGBT) with an integrated free-wheeling diode, housed in a TO-247 package. It features a maximum collector-emitter voltage of 600 V and a continuous collector current of 60 A at 25°C. The device exhibits a saturation voltage of 1.9 V and turn-off switching loss of 0.54 mJ under standard test conditions. Operating junction temperature ranges from -55°C to +150°C.
Feature Summary
- Field Stop Trench construction for low saturation voltage and minimal switching loss
- Integrated soft and fast co-packaged free-wheeling diode with low forward voltage
- Low gate charge capability
Applications
- Inverter welding systems
- Uninterruptible Power Supply (UPS) systems
- Half bridge resonant applications
Procurement Notes
Verify the ordering suffix 'G' indicates a lead-free package configuration as specified in the manufacturer documentation. Confirm that the component is supplied in rails containing 30 units per rail. Ensure the procurement channel provides the official datasheet revision 0 dated July 2014 for accurate technical validation.
Selection Notes
Select this component for designs requiring robust performance in demanding switching environments. The Field Stop technology ensures superior trade-offs between on-state voltage and switching losses. Verify thermal management requirements against the junction-to-case thermal resistance values provided in the datasheet specifications.
Part Context
This IGBT belongs to the NGTB series manufactured by onsemi. It utilizes advanced trench technology combined with field stop architecture to enhance efficiency. The device is designed for high-power applications where reliable switching and low conduction losses are critical operational parameters.
Replacement Considerations
Consult official cross-reference lists or distributor databases for verified substitute part numbers. Do not assume functional equivalence based solely on package type or voltage ratings without validating electrical characteristics against the original specifications.
