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Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 60A TO-247-3
- Series：-
- Mfr：onsemi
- Package：Bulk,Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：60 A
- Current - Collector Pulsed (Icm)：120 A
- Vce(on) (Max) @ Vge, Ic：2.2V @ 15V, 30A
- Power - Max：300 W
- Switching Energy：200µJ (off)
- Input Type：Standard
- Gate Charge：135 nC
- Td (on/off) @ 25°C：-/145ns
- Test Condition：400V, 30A, 10Ohm, 15V
- Reverse Recovery Time (trr)：430 ns
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247-3
- Grade：-
- Qualification：-
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Overview
The onsemi NGTB30N65IHL2WG is a Field Stop (FS) Trench Insulated Gate Bipolar Transistor designed for high-efficiency power switching. It features an N-channel configuration housed in a TO-247-3 through-hole package. Key electrical parameters include a maximum collector-emitter voltage of 650 V and a continuous collector current of 30 A. The device exhibits a maximum collector-emitter saturation voltage of 1.7 V and supports a switching speed of up to 1 MHz. It operates within a temperature range of -55°C to 175°C and complies with RoHS standards.
Feature Summary
- Utilizes robust Field Stop Trench construction for enhanced cost-effectiveness and performance
- Provides high thermal stability with a maximum junction temperature rating of 175°C
- Designed for low conduction losses via optimized saturation voltage characteristics
Applications
- Industrial power supply systems
- Induction heating equipment
- General-purpose power conversion circuits
Procurement Notes
Verify component authenticity by checking manufacturer markings against official datasheet specifications. Confirm the part number suffix matches the exact variant required for your circuit design. Ensure handling procedures comply with electrostatic discharge protection guidelines during installation and storage to maintain device integrity.
Selection Notes
Select this IGBT for applications requiring reliable switching at 650 V with moderate current levels. Consider the TO-247 package for efficient heat dissipation in through-hole designs. Evaluate thermal management requirements based on the 30 A continuous current rating and saturation voltage to ensure optimal system efficiency and reliability under load conditions.
Part Context
This component belongs to onsemi's Field Stop IGBT series, engineered for improved switching performance compared to standard planar technologies. The FS Trench architecture reduces tail current, enabling higher frequency operation. It serves as a discrete solution for medium-power industrial applications where efficiency and ruggedness are critical design factors.
Replacement Considerations
The NGTB30N65IHL2WG is listed as obsolete. Public confirmed substitute part numbers include FGHL40T65MQD from onsemi. Verify pinout compatibility and electrical parameter margins before implementing any replacement in existing designs.
