NGTB35N65FL2WG

$5.63

Description：IGBT TRENCH FS 650V 70A TO-247-3
Series：-

SKU:300dce2646d7 Category: Single IGBTs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：IGBT TRENCH FS 650V 70A TO-247-3
Series：-
Mfr：onsemi
Package：Tube
IGBT Type：Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)：650 V
Current - Collector (Ic) (Max)：70 A
Current - Collector Pulsed (Icm)：120 A
Vce(on) (Max) @ Vge, Ic：2V @ 15V, 35A
Power - Max：300 W
Switching Energy：840µJ (on), 280µJ (off)
Input Type：Standard
Gate Charge：125 nC
Td (on/off) @ 25°C：72ns/132ns
Test Condition：400V, 35A, 10Ohm, 15V
Reverse Recovery Time (trr)：68 ns
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：TO-247-3
Grade：-
Qualification：-

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NGTB35N65FL2WG

Overview

The onsemi NGTB35N65FL2WG is a Field Stop II trench IGBT with an integrated free-wheeling diode, housed in a TO-247 package. It features a collector-emitter voltage (VCES) of 650 V and a continuous collector current (IC) of 70 A at 25°C case temperature. The device exhibits a maximum collector-emitter saturation voltage (VCEsat) of 1.70 V at IC = 35 A and TJ = 25°C. Total switching loss (Ets) is typically 1.12 mJ under standard test conditions. The component supports a short-circuit withstand time of 5 µs and operates within a junction temperature range of -55°C to +175°C.

Feature Summary

Field Stop II Trench construction for optimized high-speed switching performance
Integrated soft and fast co-packaged free-wheeling diode with low forward voltage
Robust short-circuit capability supporting 5 µs withstand time
Lead-free packaging compliant with environmental standards

Applications

Solar inverters
Uninterruptible Power Supplies (UPS)
Welding equipment

Procurement Notes

Verify the specific ordering suffix 'G' confirms lead-free status as documented. Confirm the package type matches the required thermal management strategy for the target application. Ensure the gate drive circuitry aligns with the specified threshold and charge requirements for reliable operation.

Selection Notes

Select this component when designing systems requiring high efficiency and robust switching characteristics at 650 V. Consider the thermal resistance values for heatsink sizing. Evaluate the switching losses against the operating frequency to ensure thermal limits are not exceeded during continuous operation.

Part Context

This part belongs to the NGTB series of Field Stop II IGBTs from onsemi. It shares the same core technology and package style as other variants in the lineup but is specifically rated for 650 V blocking voltage and tailored current capabilities suitable for medium-power industrial applications.