NGTB40N120IHLWG

Description：IGBT TRENCH FS 1200V 80A TO-247
Series：-

SKU:8f4ee43d4e59 Category: Single IGBTs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：IGBT TRENCH FS 1200V 80A TO-247
Series：-
Mfr：onsemi
Package：Tube
IGBT Type：Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)：1200 V
Current - Collector (Ic) (Max)：80 A
Current - Collector Pulsed (Icm)：320 A
Vce(on) (Max) @ Vge, Ic：2.35V @ 15V, 40A
Power - Max：260 W
Switching Energy：1.4mJ (off)
Input Type：Standard
Gate Charge：420 nC
Td (on/off) @ 25°C：-/360ns
Test Condition：600V, 40A, 10Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：TO-247-3
Grade：-
Qualification：-

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NGTB40N120IHLWG

Overview

The onsemi NGTB40N120IHLWG is a Field Stop (FS) Trench Insulated Gate Bipolar Transistor with an integrated free-wheeling diode in a TO-247 package. It features a collector-emitter voltage of 1200 V and a continuous collector current of 40 A at 100°C case temperature. The device exhibits a saturation voltage of 1.90 V at 25°C and a turn-off switching loss of 1.40 mJ under standard test conditions. Total gate charge is 420 nC, and the junction-to-case thermal resistance for the IGBT is 0.48 °C/W.

Feature Summary

Field Stop Trench construction provides low saturation voltage and minimal switching loss.
Integrated rugged co-packaged free-wheeling diode with low forward voltage.
Optimized specifically for low case temperature environments such as IH cookers.

Applications

Inductive heating systems
Consumer appliances
Soft switching applications

Procurement Notes

Verify the component marking '40N120IHL' and the suffix 'G' to confirm lead-free status. Ensure the package style matches CASE 340L (TO-247 Style 4). Confirm that the application requires the specific thermal characteristics optimized for induction heating rather than general-purpose high-voltage switching.

Selection Notes

Select this component when low conduction losses are critical for efficiency in resonant or soft-switching topologies. The integrated diode simplifies circuit design by eliminating external components. Verify that the operating junction temperature remains within the -55 to +150 °C range and that the gate drive voltage aligns with the specified 15 V threshold for optimal performance.

Part Context

This device belongs to onsemi's IGBT portfolio utilizing Field Stop technology. It is designed to replace older NPT designs in high-frequency applications where reduced switching energy is required. The integration of the anti-parallel diode distinguishes it from single IGBT variants like the NGTB40N120IHWG.