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Product Detailed Parameters
- Description：IGBT TRENCH FS 1200V 80A TO-247
- Series：-
- Mfr：onsemi
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：80 A
- Current - Collector Pulsed (Icm)：320 A
- Vce(on) (Max) @ Vge, Ic：2.35V @ 15V, 40A
- Power - Max：260 W
- Switching Energy：5.5mJ (on), 1.4mJ (off)
- Input Type：Standard
- Gate Charge：420 nC
- Td (on/off) @ 25°C：140ns/360ns
- Test Condition：600V, 40A, 10Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247-3
- Grade：-
- Qualification：-
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Overview
The NGTB40N120LWG is a Field Stop Trench Insulated Gate Bipolar Transistor (IGBT) manufactured by onsemi. It features an integrated free-wheeling diode and operates with a collector-emitter voltage of 1200 V. The device supports a continuous collector current of 40 A at 100°C and a pulsed current of 320 A. Key electrical parameters include a saturation voltage of 1.90 V at 40 A, a turn-off switching loss of 1.40 mJ, and a total gate charge of 420 nC. It provides 5 µs short-circuit withstand capability and functions within a junction temperature range of -55 to +150 °C.
Feature Summary
- Field Stop Trench construction for low saturation voltage and minimal switching loss
- Integrated rugged co-packaged free-wheeling diode with low forward voltage
- 5 µs short-circuit capability for enhanced system protection
Applications
- Inverter welding machines
- Motor control inverters
- Industrial switching applications
- Microwave ovens
Procurement Notes
Verify the component against the official datasheet specifications before integration. Confirm that the TO-247 package dimensions match the design requirements. Ensure the operating conditions remain within the absolute maximum ratings defined in the documentation. Validate thermal management strategies based on the provided junction-to-case resistance values.
Selection Notes
Select this IGBT for resonant or soft switching applications requiring high efficiency. The combination of low on-state voltage and low switching loss makes it suitable for demanding power conversion tasks. Consider the integrated diode characteristics when designing freewheeling paths. Evaluate the thermal impedance curves for specific duty cycle requirements.
Part Context
This component belongs to onsemi's IGBT portfolio utilizing Field Stop technology. It is designed to replace older generation devices in high-voltage power electronics. The TO-247 package facilitates through-hole mounting for robust industrial environments. It serves as a core switching element in medium-power inverter circuits.
Replacement Considerations
Check pinout compatibility if substituting other 1200 V IGBTs in the TO-247 package. Verify that alternative devices meet the 5 µs short-circuit requirement. Compare switching losses and gate charge values to ensure equivalent performance in the target circuit.
