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Product Detailed Parameters
- Description：IGBT TRENCH FS 600V 80A TO-247-3
- Series：-
- Mfr：onsemi
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：80 A
- Current - Collector Pulsed (Icm)：160 A
- Vce(on) (Max) @ Vge, Ic：2V @ 15V, 40A
- Power - Max：366 W
- Switching Energy：970µJ (on), 440µJ (off)
- Input Type：Standard
- Gate Charge：170 nC
- Td (on/off) @ 25°C：84ns/177ns
- Test Condition：400V, 40A, 10Ohm, 15V
- Reverse Recovery Time (trr)：72 ns
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247-3
- Grade：-
- Qualification：-
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Overview
The NGTB40N60FL2WG is a single N-channel Insulated Gate Bipolar Transistor (IGBT) with an integrated free-wheeling diode, manufactured by ON Semiconductor. It utilizes Field Stop II Trench technology and is housed in a TO-247 package. Key electrical ratings include a collector-emitter voltage of 600 V, a continuous collector current of 80 A at 25°C case temperature, and a maximum power dissipation of 366 W at 25°C. The device supports a maximum junction temperature of 175°C and offers a short-circuit withstand time of 5 microseconds.
Feature Summary
- Field Stop II Trench construction for low on-state voltage and minimal switching loss
- Integrated soft and fast co-packaged free-wheeling diode with low forward voltage
- Optimized for high-speed switching applications
- Capable of 5 microsecond short-circuit withstand time
Applications
- Solar Inverters
- Uninterruptible Power Supplies (UPS)
- Welding
Procurement Notes
Verify the component authenticity by checking the marking diagram for the '40N60FL2' identifier followed by assembly codes. Confirm the presence of the 'G' suffix to ensure the device is lead-free as specified in the ordering information. Cross-reference the package type with the provided TO-247 dimensions to ensure mechanical compatibility with the intended heatsink or PCB layout.
Selection Notes
Select this IGBT for designs requiring robust performance in demanding switching environments. The 600V rating and 80A current capability make it suitable for medium-power industrial applications. Consider the thermal resistance values when designing the cooling system, as the junction-to-case resistance is 0.41 °C/W for the IGBT and 1.00 °C/W for the diode. Ensure gate drive circuits can handle the specified 15V gate-emitter voltage for optimal saturation.
Part Context
This component belongs to the Field Stop II series from ON Semiconductor, designed to offer superior efficiency compared to standard trench technologies. It is part of a family of high-voltage IGBTs aimed at improving energy conversion efficiency in renewable energy and industrial power systems. The specific model integrates a fast recovery diode to simplify circuit design in inverter topologies.
Replacement Considerations
Direct pin-compatible replacements within the same voltage and current class should be verified against the datasheet parameters. Similar models in the NGTB series may offer different current ratings or thermal characteristics. Ensure any substitute maintains the 600V breakdown voltage and compatible gate charge specifications to avoid driving issues.
