NGTB40N65FL2WG

Overview

The NGTB40N65FL2WG is a Field Stop II Insulated Gate Bipolar Transistor (IGBT) manufactured by onsemi, housed in a TO-247 package. It features a collector-emitter voltage (VCES) of 650 V and a continuous collector current (IC) of 40 A at TC = 100°C. The device incorporates a co-packaged free-wheeling diode with a forward current rating of 40 A at the same temperature. Key electrical parameters include a maximum saturation voltage (VCEsat) of 2.10 V at TJ = 175°C and a total switching loss (Ets) of 1.41 mJ under standard test conditions. The component supports a short-circuit withstand time of 5 µs and operates within a junction temperature range of -55°C to +175°C.

Feature Summary

• Utilizes Field Stop II Trench construction for low on-state voltage and minimal switching loss.
• Integrates a soft and fast co-packaged free-wheeling diode with low forward voltage.
• Designed for high-speed switching applications with optimized thermal performance.
• Provides robust short-circuit capability with a 5 µs withstand time.

Applications

• Solar Inverters
• Uninterruptible Power Supplies (UPS)
• Welding

Procurement Notes

Verify the specific ordering suffix against the manufacturer's datasheet to confirm package type and environmental compliance. Confirm availability status as distribution channels may vary. Ensure the procurement source provides valid traceability documentation. Check for any recent product change notices that might affect pinout or specifications before finalizing orders.

Selection Notes

Select this component for designs requiring a 650 V rating with integrated anti-parallel diode functionality. Evaluate the thermal resistance values to ensure adequate heat sinking for the intended power dissipation levels. Consider the gate charge characteristics when designing the driver circuitry to optimize switching speeds. Verify that the operating current remains within the derating curves provided for higher ambient temperatures.

Part Context

This part belongs to the NGTB series of Field Stop II IGBTs from onsemi. It shares architectural similarities with other devices in the family, such as the NGTB50N65FL2WG, but differs in current handling capabilities. The TO-247 package is common for through-hole mounting in medium-power industrial applications. The 'G' suffix indicates a lead-free package compliant with RoHS standards.

Replacement Considerations

Direct replacements must match the 650 V rating, TO-247 package, and integrated diode configuration. Verify that substitute parts offer comparable VCEsat and switching energy losses to maintain system efficiency. Ensure the replacement device supports the required short-circuit withstand time if used in fault-protected circuits.