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Product Detailed Parameters
- Description：IGBT TRENCH FS 600V 100A TO-247
- Series：-
- Mfr：onsemi
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：100 A
- Current - Collector Pulsed (Icm)：200 A
- Vce(on) (Max) @ Vge, Ic：2V @ 15V, 50A
- Power - Max：417 W
- Switching Energy：1.5mJ (on), 460µJ (off)
- Input Type：Standard
- Gate Charge：220 nC
- Td (on/off) @ 25°C：100ns/237ns
- Test Condition：400V, 50A, 10Ohm, 15V
- Reverse Recovery Time (trr)：94 ns
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247-3
- Grade：-
- Qualification：-
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Overview
The NGTB50N60FL2WG is a Field Stop II trench IGBT from onsemi, packaged in TO-247. It features a collector-emitter voltage (Vces) of 600 V and a continuous collector current (Ic) of 50 A at 100°C case temperature. The device has a maximum saturation voltage (Vcesat) of 2.19 V at 100°C and 2.00 V at 25°C for Ic = 50 A. Total switching loss (Ets) is 1.96 mJ at 25°C and 2.73 mJ at 150°C under standard test conditions. Thermal resistance junction-to-case is 0.36 °C/W for the IGBT and 0.60 °C/W for the diode. The integrated free-wheeling diode exhibits a forward voltage (Vf) of 2.90 V max at 175°C.
Feature Summary
- Field Stop II Trench construction provides low on-state voltage and minimal switching loss.
- Integrated soft and fast co-packaged free-wheeling diode with low forward voltage.
- Capable of withstanding short-circuit currents for up to 5 microseconds.
- Optimized for high-speed switching applications.
Applications
- Solar Inverters
- Uninterruptible Power Supplies (UPS)
- Welding
Procurement Notes
Verify the ordering suffix 'G' indicates a lead-free package configuration as specified by the manufacturer. Confirm the specific revision level matches the required datasheet version for design-in purposes. Ensure thermal management solutions align with the provided transient thermal impedance curves for the intended duty cycle and ambient conditions.
Selection Notes
Select this component for designs requiring robust performance in demanding switching environments. The 600 V rating suits medium-voltage DC bus applications. Evaluate gate resistor values against the switching loss versus Rg characteristics to balance EMI and efficiency. Consider the 175°C maximum junction temperature capability for high-temperature operation scenarios.
Part Context
This part belongs to the NGTB50N60FL2 series of Field Stop II IGBTs manufactured by onsemi. It shares the same technological platform as variants like the NGTB50N65FL2WG but differs in voltage rating. The TO-247 package facilitates efficient heat dissipation through the flange mount.
Replacement Considerations
Direct pin-compatible replacements within the same family include NGTB50N65FL2WG, though voltage ratings differ. Cross-brand equivalents require careful verification of Vces, Ic, Vcesat, and switching energy parameters to ensure circuit compatibility.
