NGTB50N60FLWG

NGTB50N60FLWG

  • Description:IGBT TRENCH FS 600V 100A TO-247
  • Series:-

SKU:7daa6f6b1ba6 Category: Brand:

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Product Detailed Parameters

  • Description:IGBT TRENCH FS 600V 100A TO-247
  • Series:-
  • Mfr:onsemi
  • Package:Tube
  • IGBT Type:Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max):600 V
  • Current - Collector (Ic) (Max):100 A
  • Current - Collector Pulsed (Icm):200 A
  • Vce(on) (Max) @ Vge, Ic:1.9V @ 15V, 50A
  • Power - Max:223 W
  • Switching Energy:1.1mJ (on), 600µJ (off)
  • Input Type:Standard
  • Gate Charge:310 nC
  • Td (on/off) @ 25°C:116ns/292ns
  • Test Condition:400V, 50A, 10Ohm, 15V
  • Reverse Recovery Time (trr):85 ns
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-247-3
  • Supplier Device Package:TO-247-3
  • Grade:-
  • Qualification:-

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NGTB50N60FLWG

Overview

The NGTB50N60FLWG is a single N-channel Insulated Gate Bipolar Transistor (IGBT) from the Field Stop II series by onsemi. It features a maximum collector-emitter voltage of 600 V and a continuous collector current of 50 A at 25°C. The device utilizes a trench field-stop technology to achieve low conduction and switching losses. Key electrical parameters include a saturation voltage of 1.8 V at 50 A, a gate-emitter threshold voltage range of 3.0 V to 4.5 V, and input capacitance of 2900 pF. It operates within a junction temperature range of -55°C to +175°C and is housed in a TO-247 package.

Feature Summary

  • Field Stop II trench technology for optimized performance
  • Low saturation voltage for reduced conduction loss
  • Soft recovery fast freewheeling diode integrated
  • High short-circuit withstand capability

Applications

  • Induction heating systems
  • Switched-mode power supplies
  • Motor control inverters
  • Uninterruptible power supplies

Procurement Notes

Verify the specific suffix against the manufacturer datasheet to confirm exact electrical characteristics and packaging configuration. Ensure the component meets RoHS compliance requirements for the target market. Cross-reference the part number with official onsemi documentation to distinguish between legacy and updated revisions before procurement.

Selection Notes

Select this component for applications requiring high efficiency in medium-power switching environments. The 600V rating suits general-purpose industrial and consumer power conversion. Evaluate thermal management needs based on the 417W power dissipation rating and ensure the drive circuit supports the specified gate charge requirements for optimal switching speed.

Part Context

This IGBT belongs to the NGTB50N60FL family, which represents onsemi's second-generation Field Stop technology. This series is designed to replace older planar technologies, offering superior ruggedness and lower losses. It is commonly used in high-frequency applications where efficiency and thermal performance are critical constraints.

Replacement Considerations

Direct replacements may include the NGTB50N60FL2WG or NGTB50N65FL2WG, depending on voltage margin requirements. Verify pinout compatibility and thermal resistance values when substituting. Consult the latest onsemi datasheets to confirm functional equivalence and any changes in switching characteristics.

NGTB50N60FLWGNGTB50N60FLWG

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