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The NGTB50N60FLWG is a single N-channel Insulated Gate Bipolar Transistor (IGBT) from the Field Stop II series by onsemi. It features a maximum collector-emitter voltage of 600 V and a continuous collector current of 50 A at 25°C. The device utilizes a trench field-stop technology to achieve low conduction and switching losses. Key electrical parameters include a saturation voltage of 1.8 V at 50 A, a gate-emitter threshold voltage range of 3.0 V to 4.5 V, and input capacitance of 2900 pF. It operates within a junction temperature range of -55°C to +175°C and is housed in a TO-247 package.
Verify the specific suffix against the manufacturer datasheet to confirm exact electrical characteristics and packaging configuration. Ensure the component meets RoHS compliance requirements for the target market. Cross-reference the part number with official onsemi documentation to distinguish between legacy and updated revisions before procurement.
Select this component for applications requiring high efficiency in medium-power switching environments. The 600V rating suits general-purpose industrial and consumer power conversion. Evaluate thermal management needs based on the 417W power dissipation rating and ensure the drive circuit supports the specified gate charge requirements for optimal switching speed.
This IGBT belongs to the NGTB50N60FL family, which represents onsemi's second-generation Field Stop technology. This series is designed to replace older planar technologies, offering superior ruggedness and lower losses. It is commonly used in high-frequency applications where efficiency and thermal performance are critical constraints.
Direct replacements may include the NGTB50N60FL2WG or NGTB50N65FL2WG, depending on voltage margin requirements. Verify pinout compatibility and thermal resistance values when substituting. Consult the latest onsemi datasheets to confirm functional equivalence and any changes in switching characteristics.