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The NGTB50N60FWG is a single N-channel Insulated Gate Bipolar Transistor (IGBT) from the onsemi Field Stop II series. It features a maximum collector-emitter voltage (VCEO) of 600 V and a continuous collector current (IC) of 50 A at 25°C. The device utilizes through-hole mounting in a TO-247 package. Key electrical parameters include a typical saturation voltage (VCE(sat)) of 1.8 V at IC = 50 A, a gate-emitter threshold voltage range of 3.0 V to 5.0 V, and a maximum power dissipation (Pd) of 368 W at 25°C case temperature. The operating junction temperature range extends from -55°C to +175°C.
Verify the exact part number against official onsemi documentation, as suffix variations may exist. Confirm RoHS compliance status and specific packaging details directly with authorized distributors or the manufacturer. Ensure the component matches the required thermal and electrical specifications for the target application before procurement.
Select this IGBT for applications requiring 600V blocking capability and moderate current handling up to 50A. Consider the thermal resistance characteristics and the need for adequate heatsinking given the 368W power dissipation rating. Evaluate the switching speed requirements against the soft-recovery diode characteristics to minimize reverse recovery losses in hard-switching topologies.
This component belongs to the NGTB series of Field Stop II IGBTs from onsemi. These devices are designed for high-efficiency power conversion in consumer and industrial markets. The series typically integrates a fast diode and offers improved switching performance compared to standard field-stop technologies, targeting cost-sensitive yet high-performance applications.
Direct replacements within the same family include NGTB50N60FL2WG. Cross-brand equivalents should be evaluated based on matching VCEO, IC, VCE(sat), and package dimensions. Verify that any substitute maintains compatible gate charge characteristics and thermal performance.