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Product Detailed Parameters
- Description：IGBT TRENCH FS 600V 100A TO-247
- Series：-
- Mfr：onsemi
- Package：Bulk,Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：100 A
- Current - Collector Pulsed (Icm)：200 A
- Vce(on) (Max) @ Vge, Ic：2.6V @ 15V, 50A
- Power - Max：-
- Switching Energy：600µJ (off)
- Input Type：Standard
- Gate Charge：135 nC
- Td (on/off) @ 25°C：70ns/144ns
- Test Condition：400V, 50A, 10Ohm, 15V
- Reverse Recovery Time (trr)：376 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247-3
- Grade：-
- Qualification：-
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Overview
The NGTB50N60SWG is a single N-channel Field Stop IGBT (FSII) manufactured by onsemi, designed for high-efficiency power switching applications. It features a collector-emitter voltage rating of 600 V and a continuous collector current of 100 A at 25 °C. The device exhibits a typical collector-emitter saturation voltage of 1.8 V and supports a maximum power dissipation of 417 W. Operating within a temperature range from -55 °C to +175 °C, it utilizes a TO-247 package with through-hole mounting. Key electrical parameters include a gate-emitter voltage limit of ±20 V and a switching frequency capability up to 1 MHz.
Feature Summary
- Field Stop II technology for optimized conduction and switching performance
- High thermal stability supporting operation up to 175 °C junction temperature
- Robust packaging suitable for high-power industrial environments
Applications
- Industrial motor control systems
- Switched-mode power supplies
- Inverter circuits in consumer appliances
Procurement Notes
Verify the specific suffix 'WG' against the manufacturer's official datasheet to confirm compliance with RoHS directives and halogen-free requirements. Confirm that the TO-247 package dimensions match the target PCB footprint. Ensure the supplier provides valid traceability documentation for silicon-based components.
Selection Notes
Select this component when a 600 V rating and 100 A continuous current capacity are required. Compare the 1.8 V saturation voltage against alternative devices to evaluate conduction losses. Verify that the driver circuit can handle the specified gate charge and switching speed without exceeding the ±20 V gate-emitter voltage limit.
Part Context
This part belongs to the NGTB50N60S series of Field Stop IGBTs. It shares the same core die and electrical characteristics as the NGTB50N60S model, with the 'WG' suffix typically indicating specific environmental compliance or packaging variations defined by onsemi. It serves as a direct replacement for legacy 600 V/100 A IGBTs in existing designs.
Replacement Considerations
The NGTB50N60FL2WG is a comparable 650 V/100 A alternative from the same manufacturer. Verify pinout compatibility and thermal resistance differences before substitution.
