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The onsemi NGTB50N65FL2WG is a single N-channel Insulated Gate Bipolar Transistor (IGBT) utilizing Field Stop II trench technology. It features a maximum collector-emitter voltage of 650 V and a continuous collector current of 100 A at 25°C. The device exhibits a typical collector-emitter saturation voltage of 1.8 V and operates within a temperature range of -55°C to +175°C. Packaged in a TO-247 tube, it dissipates up to 417 W of power. The gate-emitter voltage limits are specified at ±20 V.
Verify the specific ordering suffix against official datasheets to confirm package type and terminal finish. Confirm RoHS compliance status through manufacturer documentation before integration. Ensure thermal management design aligns with the 417 W power dissipation rating under expected operating conditions.
Select this component for applications requiring low conduction loss and high reliability in medium-power conversion systems. Compare the 100 A current rating against peak load requirements. Evaluate the TO-247 package suitability for the target PCB or heatsink mounting configuration.
This part belongs to the NGTB50N65FL2 series from onsemi. It represents an evolution in IGBT technology focusing on efficiency improvements over previous generations. The device is designed to replace older silicon technologies in demanding industrial and consumer power electronics environments.
Check for direct substitutes within the same voltage and current class. Verify pin compatibility and thermal characteristics when considering alternative manufacturers.