NGTB60N65FL2WG

$5.41

Description：IGBT FIELD STOP 650V 100A TO-247
Series：-

SKU:14093b94f926 Category: Single IGBTs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：IGBT FIELD STOP 650V 100A TO-247
Series：-
Mfr：onsemi
Package：Tube,Tube
IGBT Type：Field Stop
Voltage - Collector Emitter Breakdown (Max)：650 V
Current - Collector (Ic) (Max)：100 A
Current - Collector Pulsed (Icm)：240 A
Vce(on) (Max) @ Vge, Ic：2V @ 15V, 60A
Power - Max：595 W
Switching Energy：1.59mJ (on), 660µJ (off)
Input Type：Standard
Gate Charge：318 nC
Td (on/off) @ 25°C：117ns/265ns
Test Condition：400V, 60A, 10Ohm, 15V
Reverse Recovery Time (trr)：96 ns
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：TO-247-3
Grade：-
Qualification：-

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NGTB60N65FL2WG

Overview

The onsemi NGTB60N65FL2WG is a single N-channel Insulated Gate Bipolar Transistor (IGBT) utilizing Field Stop II Trench technology. It features a maximum collector-emitter voltage of 650 V and a continuous collector current of 100 A at 25°C. The device exhibits a low saturation voltage of 1.64 V and supports power dissipation up to 595 W. It operates within a temperature range of -55°C to +175°C and is housed in a TO-247-3 through-hole package.

Feature Summary

Field Stop II Trench construction for optimized switching performance
Integrated soft and fast co-packaged free-wheeling diode
Separate emitter drive pin configuration

Applications

Uninterruptible Power Supply (UPS) inverters
Solar inverter systems

Procurement Notes

Verify component authenticity against the manufacturer's official datasheet specifications. Confirm that the physical marking matches the part number exactly. Check for RoHS compliance documentation if required by local regulations. Ensure the TO-247-3 package condition is suitable for the intended thermal management design.

Selection Notes

Select this component for applications requiring high efficiency and robust switching capabilities. The integrated diode simplifies circuit design by reducing external component count. Consider the thermal resistance characteristics when designing heat sinks for high-power dissipation scenarios.

Part Context

This IGBT belongs to the NGTB60N65FL2 series from onsemi. It is designed for demanding switching applications where low on-state voltage and minimal switching loss are critical. The technology combines trench gate architecture with field stop layers to enhance performance.

Replacement Considerations

The NGTB75N65FL2WAG is a related variant featuring a TO-247-4L package. This alternative offers reduced E_on losses due to the separate emitter drive pin but requires different PCB layout considerations.

How to buy

Online and offline orders are supported. If the item is available for online purchase, you can place it in the cart; for wholesale pricing, please contact our product manager for a quote.

Payment Method

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Delivery time

In-stock items usually ship within 24 hours. Otherwise, shipment is arranged 1 to 2 days after the items arrive at our warehouse. Timing depends on destination and shipping method.

Freight calculation

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Mode of Transportation

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Return and Refund

Returns are accepted within 60 days of invoice with RMA approval. Items must be resalable; original invoice and test report are required. No returns for customer errors.