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Product Detailed Parameters
- Description：IGBT FS 650V 200A TO-247-4L
- Series：-
- Mfr：onsemi
- Package：Tube
- IGBT Type：Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：200 A
- Current - Collector Pulsed (Icm)：200 A
- Vce(on) (Max) @ Vge, Ic：2V @ 15V, 75A
- Power - Max：536 W
- Switching Energy：610µJ (on), 1.2mJ (off)
- Input Type：Standard
- Gate Charge：310 nC
- Td (on/off) @ 25°C：23ns/157ns
- Test Condition：400V, 75A, 10Ohm, 15V
- Reverse Recovery Time (trr)：90 ns
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-4
- Supplier Device Package：TO-247-4L
- Grade：-
- Qualification：-
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Overview
The onsemi NGTB75N65FL2WAG is a Field Stop II (FSII) Insulated Gate Bipolar Transistor (IGBT) designed for high-speed switching applications. It features an N-channel configuration housed in a TO-247-4L flange mount package with four terminals. The device supports a maximum collector-emitter voltage of 650 V and a continuous collector current of 100 A at 25°C. Maximum power dissipation reaches 595 W, with a collector-emitter saturation voltage of 1.75 V. Operating temperatures range from -55°C to +175°C, and the gate-emitter voltage limit is ±20 V.
Feature Summary
- Field Stop II Trench construction provides superior performance in demanding switching applications by offering low on-state voltage and minimal switching loss.
- TO-247-4L package design significantly reduces turn-on energy losses compared to standard three-terminal packages through a separate emitter drive pin.
- Incorporates a soft and fast co-packaged free-wheeling diode with low forward voltage characteristics.
Applications
- Uninterruptible Power Supply (UPS) inverters
- Solar power applications
Procurement Notes
Verify the specific suffix against official datasheets to confirm terminal count and electrical ratings. Package variations exist within this series; ensure the selected component matches the required thermal and mechanical specifications for the target circuit design before procurement.
Selection Notes
Select this component for designs requiring reduced turn-on losses and improved efficiency in medium-power conversion systems. The four-terminal layout necessitates careful PCB layout to utilize the separate emitter pin effectively for minimizing parasitic inductance during high-frequency operation.
Part Context
This device belongs to the NGTB series of Field Stop II IGBTs from onsemi. It shares architectural similarities with other models in the lineup but is distinguished by its specific current rating and the inclusion of a co-packaged diode in the TO-247-4L form factor.
Replacement Considerations
Direct replacements must match the 650V rating, 100A current capacity, and TO-247-4L package. Verify that substitute components also feature Field Stop technology and integrated freewheeling diodes to maintain system performance parameters.
