NGTD13T120F2SWK

Overview

The NGTD13T120F2SWK is a silicon IGBT bare die component from onsemi, belonging to the NGTD17R120F2 series. It features a trench field stop technology designed for high-efficiency power switching applications. The device operates with a collector-emitter voltage rating of 1200 V and supports a continuous collector current of 13 A at 25°C. It utilizes a surface-mount package configuration suitable for automated assembly processes in industrial and consumer electronics.

Feature Summary

• Utilizes trench field stop technology for optimized switching performance
• Designed as a bare die for flexible module integration
• Supports surface mount installation methods

Applications

• Industrial motor drives
• Uninterruptible power supplies
• High-frequency inverters

Procurement Notes

Verify the specific revision level and lot traceability requirements before procurement. Confirm that the bare die format aligns with your assembly capabilities, as standard discrete packaging is not provided. Ensure compliance with RoHS directives and check for any active product change notifications or discontinuance notices affecting long-term supply stability.

Selection Notes

Select this component when a compact, high-voltage silicon IGBT solution is required for custom module designs. Consider the thermal management needs associated with bare die mounting and ensure the gate drive circuitry matches the specified electrical characteristics. Evaluate the trade-off between cost efficiency and assembly complexity compared to pre-packaged alternatives.

Part Context

This part belongs to onsemi's NGTD series of trench field stop IGBTs, which are engineered for improved switching speed and reduced conduction losses. The series targets applications demanding high reliability and efficiency in power conversion systems. As a bare die, it serves as a building block for larger power modules rather than a standalone through-hole or surface-mount discrete component.